IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
MSG15T120HLT1


TO-220F IGBT Transistors / Modules ROHS
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MASPOWER 1
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AUD 2.0248
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SGF23N60UFTU


IGBT Transistors 600V/12A
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ON Semiconductor 1
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AUD 2.0977
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Single600 V2.1 V+/- 20 V23 A+/- 100 nA75 W TO - 3PF - 3Tube Through Hole - 55 C+ 150 CSgf23n60
CRG75T65BK5SD


TO-247 IGBTs ROHS
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CRMICRO 1
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AUD 2.6115
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AOK60B65H2AL


Transistor: IGBT; 650V; 60A; 166W; TO247; Eoff: 1.17mJ; Eon: 2.36mJ
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Alpha & Omega 1
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AUD 2.8493
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  1.95 V   166 W         
IKW40N60H3


IGBT Transistors 600V 40A 306W
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Infineon 1
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AUD 3.3786
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Single600 V1.95 V20 V40 A100 nA306 W TO - 247TubeSiThrough Hole306 W- 40 C+ 150 CIkw40n60
IGW25T120


Transistor: IGBT; 1200V; 25A; 190W; TO247-3
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Infineon 1
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AUD 3.5598
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      190 W         
MSG75D65HFC0


TO-247 IGBT Transistors / Modules ROHS
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MASPOWER 1
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AUD 4.5429
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IKD15N60RF


IGBT Transistors IGBT PRODUCTS TrenchStop RC
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Infineon 1
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AUD 5.0436
Multiples of: 1

Single600 V2.2 V+/- 20 V30 A100 nA  TO - 252 - 3Cut TapeSiSmd/Smt250 W- 40 C+ 175 CRc
STGW80V60DF


STMicroelectronics IGBT Transistors Trench gate V series 600V 80A HiSpd
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STMicroelectronics 1
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AUD 5.9585
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Single600 V1.85 V20 V120 A250 nA  TO - 247 - 3TubeSiThrough Hole469 W- 55 C+ 175 C600 - 650V Igbts
IKW50N65WR5XKSA1


IGBT Transistors The reverse conducting TRENCHSTOP 5 WR5 IGBT was specifically optimized for full rated hard switching turn off typically found in Welding inverter application. Excellent price/performance ratio of WR5 IGBT allows access to the high performance techno
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Infineon 1
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AUD 7.1
Multiples of: 1

Single650 V1.4 V20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole282 W- 40 C+ 175 CTrenchstop 5 Wr5
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