IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
HGTP10N120BN


IGBT Transistors 35A 1200V N-Ch
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ON Semiconductor 1
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AUD 7.3745
Multiples of: 1

Single1200 V2.45 V+/- 20 V35 A+/- 250 nA298 W TO - 220 - 3Tube Through Hole - 55 C+ 150 CHgtp10n120
IXBH5N160G


IGBT Transistors 5 Amps 1600V
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IXYS 1
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AUD 8.3322
Multiples of: 1

Single1.6 kV4.9 V20 V5.7 A100 nA  TO - 247 - 3TubeSiThrough Hole68 W- 55 C+ 150 CIxbh5n160
IXYH50N120C3


IGBT Transistors XPT IGBT C3-Class 1200V/105A
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IXYS 1
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AUD 11.66
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Single1200 V2.5 V30 V105 A100 nA  TO - 247AD - 3TubeSiThrough Hole625 W- 55 C+ 150 CIxyh50n120
FGHL75T65LQDT


IGBT Transistors FS4 LOW VCESAT IGBT 650V 75A TO247-3L WITH FULL RATED CURRENT DIODE
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ON Semiconductor 1
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AUD 13.9239
Multiples of: 1

                
ESJ100SH120AN


FD-7 IGBT Transistors / Modules ROHS
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MASPOWER 1
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AUD 30.9964
Multiples of: 1

                
IXXK300N60B3


IGBT Transistors XPT 600V IGBT 300A
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IXYS 1
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AUD 42.0514
Multiples of: 1

         TubeSi    Ixxk300n60
SGM100HF12A3TFD


- IGBTs ROHS
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Silan 1
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AUD 60.1398
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MG200HF12MIC2


- IGBTs ROHS
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Yangjie 1
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AUD 107.076
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MG400HF12MIC2


- IGBTs ROHS
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Yangjie 1
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AUD 178.0097
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STGP15M65DF2


IGBT Transistors Trench gate field-stop IGBT M series, 650 V, 15 A low loss
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STMicroelectronics 1
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AUD 1.0466
Multiples of: 1

Single650 V1.55 V+/- 20 V30 A+/- 250 uA  TO - 220 - 3 SiThrough Hole136 W- 55 C+ 175 CStgp15m65df2
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