IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IGU04N60T


IGBT Transistors IGBT PRODUCTS TrenchStop
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Infineon 1
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between Mon. 12 Oct to Thu. 15 Oct
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AUD 1.1791

Multiples of: 1

         TubeSi    Trenchstop Igbt
STGFW20H65FB


STMicroelectronics IGBT Transistors
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STMicroelectronics 1
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between Fri. 02 Oct to Tue. 06 Oct
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AUD 1.8386

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Single650 V1.55 V20 V40 A250 nA  TO - 3PFTubeSiThrough Hole52 W- 55 C+ 175 C600 - 650V Igbts
STGW30NC60VD


STMicroelectronics IGBT Transistors PowerMESH
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STMicroelectronics 1
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between Fri. 02 Oct to Tue. 06 Oct
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AUD 2.64

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Single600 V2.5 V+/- 20 V +/- 100 nA  TO - 247 - 3TubeSiThrough Hole250 W- 55 C+ 150 C600 - 650V Igbts
CRG75T60AK3HD


TO-247 IGBTs ROHS
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CRMICRO 1
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AUD 2.6853

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NCE60TD65BT


TO-247 IGBTs ROHS
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NCE Power 1
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AUD 3.009

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G40T120AK3S


278W 238ns 77ns +150℃@(Tj) 80A 1.2kV 6V@250uA 208nC@40A,15V 1.9V@10A,15V 1.5mJ 2.8mJ 1mA@1.2kV 6.618nF@25V 2.4V@20A 160A TO-247 IGBTs ROHS
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CRMICRO 1
Ships to you
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AUD 3.041

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FGHL50T65SQ


IGBT Transistors FS4TIGBT 50A 650V
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ON Semiconductor 1
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between Fri. 02 Oct to Tue. 06 Oct
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AUD 3.19

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Single650 V1.6 V20 V100 A400 nA  TO - 247 - 3Tube Through Hole268 W- 55 C+ 175 C 
IKW40N65H5FKSA1


Transistor: IGBT; 650V; 74A; 250W; TO247-3; Series: H5
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Infineon 1
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between Mon. 12 Oct to Thu. 15 Oct
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AUD 4.1941

Multiples of: 1

      250 W   Trenchstop 5    H5
IKFW40N60DH3EXKSA1


Transistor: IGBT; 600V; 28A; 81W; PG-TO247-3-AI
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Infineon 1
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between Fri. 02 Oct to Tue. 06 Oct
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AUD 4.73

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      81 W   Trenchstop     
MSG50T65HHC0


50A 650V TO-247 IGBT Transistors / Modules ROHS
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MASPOWER 0
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AUD 1.8808

Multiples of: 1

                
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