IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
SPT40N120F1C


TO-247 IGBTs ROHS
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SPTECH 2
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AUD 2.9667
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STGWA8M120DF3


IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
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STMicroelectronics 2
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AUD 5.1132
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STGP30V60DF


STMicroelectronics IGBT Transistors 600V 30A High Speed Trench Gate IGBT
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STMicroelectronics 2
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AUD 5.1543
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Single600 V2.35 V20 V60 A250 nA  TO - 220TubeSiThrough Hole258 W- 55 C+ 175 C600 - 650V Igbts
IGW30N60H3FKSA1


IGBT Transistors HOME APPLIANCES 14
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Infineon 2
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AUD 5.2762
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FGHL50T65MQD


IGBT Transistors 650 V 50 A FS4
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ON Semiconductor 2
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AUD 8.02
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RGS30TSX2DHRC11


IGBT Transistors TO247NNP 1200V TRNCH 15A
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ROHM 2
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AUD 18.753
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SGM75HF12A1TLD


- IGBTs ROHS
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Silan 2
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AUD 41.0253
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MG150HF12MIC2


- IGBTs ROHS
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Yangjie 2
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AUD 92.1225
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EL3120S1(TA)(SAS)-V


SMD-8 IGBTs ROHS
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Everlight 1
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AUD 0.8385
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IKA15N65ET6


IGBT Transistors HOME APPLIANCES 14
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Infineon 1
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AUD 1.5147
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