Transistors

A transistor is a semiconductor device that is commonly used to amplify or switch electronic signals. It consists of three terminals, normally referred to as the emitter, base and collector. The transistor operates in four main states: cutoff, forward active, reverse active and saturation. It acts as an electrical switch when forward biased, meaning a current is allowed to flow between the two terminals. When it is reverse biased, meaning the current flows in the opposite direction, the device is turned off. Transistors are used in amplifying circuits to amplify voltage, current, or even power. They are also used in digital logic circuits to switch between two or more stable states.
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STB60NF06LT4


Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; D2PAK
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STMicroelectronics 21340
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AUD 1.338
Multiples of: 1000

SI7469DP-T1-E3


P-Channel 80 V 28A (Tc) 5.2W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8
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Vishay 14550
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AUD 1.2232
Multiples of: 3000

STD901T


Darlington Transistors PWR BIP/S.SIGNAL
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STMicroelectronics 14550
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AUD 1.3304
Multiples of: 2500

STD9NM60N


MOSFET N-Ch 600V 0.63 6.5A MDmesh II Power MO
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STMicroelectronics 14550
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AUD 1.4536
Multiples of: 1

BSC030N08NS5ATMA1


Transistor: N-MOSFET; unipolar; 80V; 100A; 139W; PG-TDSON-8
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Infineon 14550
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AUD 1.6161
Multiples of: 5000

BSC109N10NS3GATMA1


MOSFET N Trench 100V 63A (Tc) 3.5V @ 45uA 10.9 mΩ @ 46A,10V PG-TDSON-8 RoHS
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Infineon 14550
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AUD 1.6696
Multiples of: 5000

STB100N10F7


MOSFET N-Ch 100V 0.0068 Ohm typ. 80A STripFET
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STMicroelectronics 14550
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AUD 1.6829
Multiples of: 1000

STGW60V60DF


IGBT Transistors 600V 60A High Speed Trench Gate IGBT
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STMicroelectronics 14550
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AUD 3.0464
Multiples of: 600

SQ4470EY-T1_BE3


MOSFET N-CHANNEL 60V
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Vishay 14546
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AUD 1.4096
Multiples of: 1

BSC052N08NS5ATMA1


Transistor: N-MOSFET; unipolar; 80V; 95A; 83W; PG-TDSON-8
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Infineon 9700
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AUD 1.0191
Multiples of: 5000

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