SiC MOSFETs

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Image	Stock Code(▲▼)	Description	Manufacturer	Availability ⓘ (▲▼)	Price(AUD) (Ex. GST)(▲▼)	Enter Qty	Mounting Style	Package/Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Qualification	Tradename

NTBG040N120M3S

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, D2PAK-7L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

34
Ships to you
between Thu. 19 Feb to Mon. 23 Feb

February 2026

February 2026
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AUD 9.5277

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

1.2 kV

51 A

52 mOhms

- 10 V , + 22 V

4.4 V

70 nC

- 55 C

+ 175 C

329 W

Enhancement

EliteSiC

NVH4L060N065SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 44mohm, 650V, M2, TO247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

34
Ships to you
between Thu. 19 Feb to Mon. 23 Feb

February 2026

February 2026
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AUD 15.6554

Multiples of: 1

Through Hole

N - Channel

1 Channel

650 V

47 A

70 mOhms

- 8 V , + 22 V

4.3 V

74 nC

- 55 C

+ 175 C

176 W

Enhancement

EliteSiC

IMT65R010M2HXUMA1

SiC MOSFETs SILICON CARBIDE MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

34
Ships to you
between Thu. 19 Feb to Mon. 23 Feb

February 2026

February 2026
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10	1	2	3	4	5	6	7

AUD 24.7413

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

650 V

168 A

13.1 mOhms

- 7 V , + 23 V

4.5 V

113 nC

- 55 C

+ 175 C

681 W

Enhancement

CoolSiC

MSC025SMA120S

SiC MOSFETs MOSFET SIC 1200 V 25 mOhm TO-268
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip

32
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between Thu. 19 Feb to Mon. 23 Feb

February 2026

February 2026
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AUD 65.9615

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

1.2 kV

89 A

31 mOhms

- 10 V , + 23 V

1.8 V

232 nC

- 55 C

+ 175 C

370 W

Enhancement

TW107Z65C,S1F

SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 107mohm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba

32
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between Thu. 19 Feb to Mon. 23 Feb

February 2026

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AUD 8.4

Multiples of: 1

Through Hole

N - Channel

1 Channel

650 V

20 A

107 mOhms

- 10 V , + 25 V

5 V

21 nC

+ 175 C

76 W

Enhancement

IMBG65R022M1HXTMA1

SiC MOSFETs Y
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

32
Ships to you
between Thu. 19 Feb to Mon. 23 Feb

February 2026

February 2026
	S	M	T	W	T	F	S
5	25	26	27	28	29	30	31
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10	1	2	3	4	5	6	7

AUD 18.9231

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

650 V

64 A

30 mOhms

- 5 V , + 23 V

5.7 V

67 nC

- 55 C

+ 175 C

300 W

Enhancement

CoolSiC

G3R450MT17D

SiC MOSFETs 1700V 450mohm TO-247-3 G3R SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

GeneSiC Semiconductor

31
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between Thu. 19 Feb to Mon. 23 Feb

February 2026

February 2026
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AUD 8.0448

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.7 kV

7 A

450 mOhms

- 5 V , + 15 V

2.7 V

13 nC

- 55 C

+ 175 C

70 W

Enhancement

GP2T020A120H

SiC MOSFETs 1200V, 18mOhm, TO-247-4L MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SemiQ

30
Ships to you
between Thu. 19 Feb to Mon. 23 Feb

February 2026

February 2026
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AUD 36.6277

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

119 A

18 mOhms

- 10 V , + 25 V

4 V

216 nC

- 55 C

+ 175 C

564 W

Enhancement

DMWSH120H90SM3

SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS
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Diodes Incorporated

29
Ships to you
between Thu. 19 Feb to Mon. 23 Feb

February 2026

February 2026
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10	1	2	3	4	5	6	7

AUD 10.7032

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

41 A

97.5 mOhms

- 4 V , + 15 V

3.5 V

50.9 nC

- 55 C

+ 170 C

246 W

Enhancement

DMWSH120H28SM3

SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated

29
Ships to you
between Thu. 19 Feb to Mon. 23 Feb

February 2026