MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CRST045N10N


MOSFET N Trench 100V 120A (Tc) 4V @ 250uA 4.5 mΩ @ 50A,10V TO-220 RoHS
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CRMICRO 2098
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between Thu. 06 Aug to Tue. 11 Aug
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AUD 0.9017

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SQS146ENW-T1_GE3


MOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET
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Vishay 2041
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between Wed. 29 Jul to Fri. 31 Jul
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AUD 0.4466

Multiples of: 1

88 A40 V6 mOhmsN - Channel 3.5 V- 55 C+ 175 C91 WSMD/SMTPOWERPAK 1212 - 8SLW Si1 Channel- 20 V , + 20 V17 nCEnhancement  
IRL540NSTRLPBF


Transistor: N-MOSFET; unipolar; 100V; 36A; 3.8W; D2PAK
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Infineon 2041
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between Wed. 29 Jul to Fri. 31 Jul
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AUD 1.1936

Multiples of: 1

36 A100 V63 mOhmsN - Channel    3.8 WSmd/SmtD2PAKReelSi1 Channel16 V49.3 nC   
HSM0228


MOSFET 2 N Channel(Double) 100V 4A 2.5V @ 250uA 68mΩ @ 4A,10V SOP-8 RoHS
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HUASHUO 2041
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between Thu. 06 Aug to Tue. 11 Aug
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AUD 0.3796

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PSMN2R2-25YLC,115


N-Channel 25 V 100A (Tc) 106W (Tc) Surface Mount LFPAK56, Power-SO8
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Nexperia 2039
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between Wed. 29 Jul to Fri. 31 Jul
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AUD 0.4843

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100 A25 V2.4 mOhmsN - Channel20 V1.54 V- 55 C+ 175 C106 WSmd/SmtLFPAK - 4Reel   39 nC   
RD3P08BBDTL


MOSFET NCH 100V 80A POWER
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ROHM 2038
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between Wed. 29 Jul to Fri. 31 Jul
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AUD 2.2821

Multiples of: 1

80 A100 V11.6 mOhmsN - Channel 2 V- 55 C+ 150 C119 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V37 nCEnhancement  
NCEP15T14LL


TOLL MOSFETs ROHS
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NCE Power 2037
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between Thu. 06 Aug to Tue. 11 Aug
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AUD 3.9009

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IPD80R1K0CEATMA1


MOSFET N-Ch 800V 5.7A DPAK-2
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Infineon 2037
Ships to you
between Wed. 29 Jul to Fri. 31 Jul
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AUD 0.9046

Multiples of: 1

5.7 A800 V800 mOhmsN - Channel30 V3 V- 55 C+ 150 C83 WSmd/SmtDPAK - 2Reel   31 nC   
WMO10N80M3


Transistor: N-MOSFET; SJ-MOSFET M3; unipolar; 800V; 10A; 85W; TO252
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Wayon 2037
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between Thu. 23 Jul to Wed. 29 Jul
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AUD 1.0301

Multiples of: 1

            Sj - Mosfet M3      
TP2N7002ET1G


SOT-23 MOSFETs ROHS
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TECH PUBLIC 1940
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between Thu. 06 Aug to Tue. 11 Aug
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AUD 0.0197

Multiples of: 50

                   
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