MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLML6401


SOT-23 MOSFETs ROHS
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Bourne 2153
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AUD 0.0647
Multiples of: 10

                   
PSMB033N10NS2_R2_00201


MOSFETs 100V/ 3.3mohms / TO-263AB for Industrail market
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Panjit 2135
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AUD 2.9552
Multiples of: 1

219 A100 V3.3 mOhmsN - Channel 3.8 V- 55 C+ 175 C333 WThrough HoleTO - 263AB - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V65 nCEnhancement  
IPB029N15NM6ATMA1


MOSFETs TRENCH >=100V
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Infineon 2135
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AUD 5.7299
Multiples of: 1

165 A150 V2.9 mOhmsN - Channel 3.5 V- 55 C+ 175 C395 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V105 nCEnhancement  
SWD7N65J


650V 7A 600mΩ TO-252 MOSFETs ROHS
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Sam&wing 2134
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AUD 0.481
Multiples of: 1

                   
IPD900P06NMATMA1


MOSFET TRENCH 40<-<100V
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Infineon 2134
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AUD 0.5582
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16.4 A60 V90 OhmsP - Channel - 2.1 V- 55 C+ 175 C63 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V- 27 nCEnhancement  
2N7002KW


SOT-323 MOSFETs ROHS
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SLKORMICRO 2134
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AUD 0.0181
Multiples of: 50

                   
WM02N31M


SOT-23 MOSFETs ROHS
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Wayon 2134
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AUD 0.0324
Multiples of: 20

                   
BSS123LT1G-HXY


100V 170mA 6Ω@10V 350mW 2.5V null SOT-23 MOSFETs ROHS
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HXY MOS 2134
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AUD 0.024
Multiples of: 20

                   
SM4286T9RL-HXY


100V 20A 70mΩ@10V,5A 2.5V null TO-252-2L MOSFETs ROHS
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HXY MOS 2134
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AUD 0.1239
Multiples of: 5

                   
PNM723T703E0-2


MOSFET N Trench 40V 180mA 1.5V @ 250uA 7.5 Ω @ 500mA,10V SOT-723 RoHS
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Prisemi 194
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AUD 0.0314
Multiples of: 20

                   
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