MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTMYS003N08LHTWG


MOSFETs Power MOSFET 80 V, 132 A, 3.3mohm Single N-Channel
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ON Semiconductor 2153
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AUD 2.3313
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132 A80 V4.3 mOhmsN - Channel 2 V- 55 C+ 175 C137 WSMD/SMTLFPAK - 4Reel , Cut TapeSi1 Channel- 20 V , + 20 V64 nCEnhancement  
IPL60R2K1C6SATMA1


Transistor: N-MOSFET; unipolar; 600V; 2.3A; 21.6W; PG-VSON-4
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Infineon 2152
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AUD 0.5539
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            Coolmos C6      
DMN3065LW-7


MOSFET 30V N-Ch Enh Mode 12Vgss 465pF 5.5nC
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Diodes Incorporated 2151
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AUD 0.1797
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4 A30 V52 mOhmsN - Channel 500 mV- 55 C+ 150 C770 mWSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel10 V11.7 nCEnhancement  
DMN3024LK3-13


MOSFET ENHANCE MODE MOSFET 30V N-CHANNEL
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Diodes Incorporated 2150
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AUD 0.3251
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14.4 A30 V24 mOhmsN - Channel 1 V- 55 C+ 150 C4.1 WSmd/SmtTO - 252ReelSi1 Channel20 V12.9 nCEnhancement  
Hot ZVN0545A


N-Channel 450 V 90mA (Ta) 700mW (Ta) Through Hole TO-92
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Diodes Incorporated 2150
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AUD 1.384
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90 mA450 V50 OhmsN - Channel 1 V- 55 C+ 150 C700 mWThrough HoleTO - 92 - 3Cut TapeSi1 Channel10 V Enhancement  
HGD032N04A


TO-252 MOSFETs ROHS
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CRMICRO 2149
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AUD 0.3891
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IAUCN04S7N006TATMA1


MOSFETs OptiMOS 7 Power-Transistor
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Infineon 2149
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AUD 2.2164
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425 A40 V770 uOhmsN - Channel 3 V- 55 C+ 175 C205 WSMD/SMTPG - LHDSO - 10 - 3Reel , Cut TapeSi1 Channel20 V112 nCEnhancement OptiMOS
HSU30N02


20V 30A 8mΩ@4.5V,30A 40W 1V@250uA null TO-252 MOSFETs ROHS
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HUASHUO 2148
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AUD 0.0917
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IRF9317TRPBF-TP


SOP-8 MOSFETs ROHS
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TECH PUBLIC 2148
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AUD 0.2456
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SI7461DP


PowerPAK-SO-8 MOSFETs ROHS
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TECH PUBLIC 2004
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AUD 1.1167
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