MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RSS100N03FRATB


MOSFET Nch 30V Vds 10A 0.0135Rds(on) 14Qg
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ROHM 2163
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AUD 0.617
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10 A30 V9.5 mOhmsN - Channel 1 V + 150 C2 WSmd/SmtSOP - 8Cut TapeSi1 Channel10 V14 nCEnhancementAec - Q101 
ASM60R330E


650V 11A 330m 176W 3.5V DFN8x8 MOSFETs ROHS
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ANHI 2162
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AUD 0.9585
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NX3008PBKV,115


NXP Semiconductors MOSFET 30V 220 MA DUAL P-CH TRENCH MOSFET
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Nexperia 2160
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AUD 0.1084
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- 220 mA- 30 V2.8 OhmsP - Channel - 0.9 V- 55 C+ 150 C1.09 WSmd/SmtSOT - 666 - 6ReelSi2 Channel 0.55 nCEnhancement  
SI1032X-T1-GE3


MOSFET 20V 200mA 340mW 5.0ohm @ 4.5V
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Vishay 2160
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AUD 0.4219
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   N - Channel  - 55 C+ 150 C Smd/SmtSC - 89 - 3Reel       
FDD6030L


Fairchild Semiconductor MOSFET 30V N&P-Channel Power Trench
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ON Semiconductor 2160
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AUD 1.4338
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50 A30 V14.5 mOhmsn - channel 1 V- 55 C+ 175 C3.2 Wsmd/smtDPAK - 3Reelsi1 channel20 V28 nCenhancement powertrench
IRF630PBF-BE3


N-Channel 200V 9A (Tc) 74W (Tc) Through Hole TO-220AB
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Vishay 2159
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AUD 1.1827
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9 A200 V400 mOhmsN - Channel 4 V- 55 C+ 150 C74 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V43 nCEnhancement  
IRF8714


SO-8 MOSFETs ROHS
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TECH PUBLIC 2158
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AUD 0.2075
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BSP372N H6327


Infineon Technologies MOSFET SMALL SIGNAL N-CH
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Infineon 2157
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AUD 0.3858
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1.8 A100 V153 mOhmsN - Channel 800 mV- 55 C+ 150 C1.8 WSmd/SmtSOT - 223 - 4Reel-1 Channel20 V14.3 nCEnhancement  
BSC016N04LSGATMA1


MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
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Infineon 2157
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AUD 2.1688
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           Reel      Optimos
SI4532CDY-T1-GE3


MOSFET 30V 6.0/4.3A 2.78W 47/89mohm @ 10V
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Vishay 2156
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AUD 0.4062
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4.3 A , 6 A30 V47 mOhms , 89 mOhmsN And P - Channel 1 V- 55 C+ 150 C2.78 w , 2.78 WSmd/SmtSOIC - 8 NarrowReelSi2 Channel10 V6 nC , 7.8 nCEnhancement Trenchfet
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