MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CDM4-600LR TR13


MOSFET 600V N-Ch PFC FET 0.65Ohm 30Vgs 38W
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Central Semiconductor 2226
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AUD 0.8914
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4 A600 V950 mOhmsN - Channel 2 V- 55 C+ 150 C38 WSmd/SmtDPAK - 3ReelSi1 Channel30 V11.59 nCEnhancement Ultramos
DMP2004DMK-7


Diodes Incorporated MOSFET 500mW -20Vdss
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Diodes Incorporated 2224
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AUD 0.3448
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550 mA- 20 V900 mOhmsP - Channel  - 55 C+ 150 C500 mWSmd/SmtSOT - 26 - 6ReelSi2 Channel8 V Enhancement  
R6011KND3TL1


N-Channel 600 V 11A (Tc) 124W (Tc) Surface Mount TO-252
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ROHM 2224
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AUD 2.397
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11 A600 V390 mOhmsN - Channel 3 V- 55 C+ 150 C124 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V22 nCEnhancement  
IAUTN08S5N012LATMA1


MOSFETs MOSFET_(75V 120V(
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Infineon 2224
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AUD 4.3836
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410 A80 V1.15 mOhmsN - Channel 3.3 V- 55 C+ 175 C375 WSMD/SMTPG - HSOF - 8 - 2Reel , Cut TapeSi2 Channel- 20 V , + 20 V178 nCEnhancement  
DMN6040SSDQ-13


MOSFET 60V Dual N-Ch FET 40mOhm 10V 5.0A
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Diodes Incorporated 2223
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AUD 0.3645
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5 A , 5 A60 v , 60 V30 mOhms , 30 mOhmsN - Channel 1 v , 1 V- 55 C+ 150 C1.3 WSmd/SmtSO - 8ReelSi2 Channel+/- 20 v , +/- 20 V22.4 nC , 22.4 nCEnhancement  
2N7002HW


SC70(SOT-323) MOSFETs ROHS
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Leiditech 2221
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AUD 0.053
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AGM15T03LL


150V 220A 3.1m@10V,20A 429W 2.9V@250uA 1PCSNChannel TOLL MOSFETs ROHS
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AGM-Semi 2194
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AUD 2.9126
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IRFR9120N


TO-252 MOSFETs ROHS
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TECH PUBLIC 2073
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AUD 0.3724
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CJ3415 R15


MOSFET P Trench 20V 4A 1V @ 250uA 50 mΩ @ 4A,4.5V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 1940
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AUD 0.0719
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HSBA6048


MOSFET N Channel 60V 85A 2.3V @ 250uA 3.6mO @ 20A,10V PRPAK5x6 RoHS
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HUASHUO 1705
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AUD 0.887
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