MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SISA18ADN-T1-GE3


Vishay Semiconductors MOSFET 30V 7.5mOhm10V 18A N-Ch G-IV
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Vishay 2235
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AUD 0.266
Multiples of: 5

38.3 A30 V9.6 mOhmsn - channel+ 20 v , - 16 V1.2 V- 55 C+ 150 C19.8 Wsmd/smtPOWERPAK - 1212 - 8Reelsi1 channel20 v , - 16 V14.3 nCenhancement trenchfet
DMN32D2LV-7


MOSFET Dual N-Channel
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Diodes Incorporated 2235
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AUD 0.2779
Multiples of: 5

400 mA30 V1.2 OhmsN - Channel  - 55 C+ 150 C400 mWSmd/SmtSOT - 563 - 6ReelSi2 Channel10 V Enhancement  
IRFR9024NTRPBF


TO-252 MOSFETs ROHS
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TECH PUBLIC 2235
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AUD 0.3075
Multiples of: 5

                   
SI1467DH-T1-GE3


MOSFET 20V 2.7A P-CH MOSFET
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Vishay 2235
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AUD 0.4501
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   P - Channel  - 55 C+ 150 C Smd/SmtSOT - 363 - 6ReelSi     Trenchfet
IRLZ44NSTRLPBF


N-Channel 55 V 47A (Tc) 3.8W (Ta), 110W (Tc) Surface Mount D2PAK
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Infineon 2234
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AUD 1.0606
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47 A55 V35 mOhmsN - Channel    110 WSmd/SmtD2PAKReelSi1 Channel16 V32 nC   
RQ5E020SPTL


MOSFET PCH -30V -2A SMALL SIGNAL
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ROHM 2233
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AUD 0.2775
Multiples of: 1

2 A30 V120 mOhmsP - Channel 1 V- 55 C+ 150 C1 WSmd/SmtSOT - 346T - 3Cut TapeSi1 Channel20 V4.3 nCEnhancement  
STF11N60DM2


MOSFET POWER MOSFET
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STMicroelectronics 2232
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AUD 1.1246
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10 A600 V370 mOhmsN - Channel 3 V- 55 C+ 150 C25 WThrough HoleTO - 220FP - 3 Si1 Channel25 V16.5 nCEnhancement Mdmesh
STL10N65M2


STMicroelectronics MOSFET
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STMicroelectronics 2232
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AUD 1.3748
Multiples of: 1

 650 V n - channel  - 55 C+ 150 C smd/smtPowerflat 5X6 HV - 8Reelsi1 channel25 V   mdmesh
2SK3541


SOT-723 MOSFETs ROHS
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Siliup 2231
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AUD 0.0115
Multiples of: 50

                   
IAUT260N10S5N019ATMA1


OptiMOS-5 Power Transistor MOSFET N-Channel 100V 260A 8-Pin PG-HSOF-1 T/R
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Infineon 244
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AUD 3.2836
Multiples of: 1

260 A100 V1.9 mOhmsN - Channel 2.2 V- 55 C+ 175 C300 WSmd/SmtHSOF - 8Cut TapeSi1 Channel10 V128 nCEnhancementAec - Q101 
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