MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN6070SSD-13


MOSFET N-Ch Enh Mode FET 60Vdss 20Vgss
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Diodes Incorporated 2279
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AUD 0.4284
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3.3 A60 V80 OhmsN - Channel 1 V- 55 C+ 150 C1.5 WSmd/SmtSOIC - 8Cut TapeSi2 Channel10 V12.3 nCEnhancement  
VN4012L-G


Transistor: N-MOSFET; unipolar; 400V; 0.15A; 1W; TO92
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Microchip 2279
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AUD 1.9403
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160 mA400 V12 OhmsN - Channel  - 55 C+ 150 C1 WThrough HoleTO - 92BulkSi1 Channel20 V Enhancement  
PTD12N10


MOSFET T0-252 RoHS
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PUOLOP 2279
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AUD 0.0981
Multiples of: 5

                   
STD47N10F7AG


TO-252 MOSFETs ROHS
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Leiditech 2277
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AUD 0.5642
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NTMYS029N08LHTWG


MOSFETs T8 80V LL LFPAK
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ON Semiconductor 2277
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AUD 1.3824
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22 A80 V38 mOhmsN - Channel 2 V- 55 C+ 175 C33 WSMD/SMTLFPAK - 4Reel , Cut TapeSi1 Channel- 20 V , + 20 V4 nCEnhancement  
DMT6016LPS-13


Diodes Incorporated MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A
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Diodes Incorporated 2276
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AUD 0.5106
Multiples of: 1

10.6 A60 V16 mOhmsN - Channel 2.5 V- 55 C+ 150 C2.7 WSmd/SmtPowerdi5060 - 8Reel  20 V17 nCEnhancement Dmt6016
FDM3622


MOSFET 100V N-Ch PowerTrench MOSFET
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ON Semiconductor 2276
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AUD 1.1279
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4.4 A100 V44 mOhmsN - Channel  - 55 C+ 150 C2.1 WSmd/SmtMICRO - FETReelSi1 Channel20 V Enhancement Ultrafet
SI3438DV-T1-E3


Vishay Semiconductors MOSFET 40V 7.4A 3.5W 35.5mohm 10V
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Vishay 2275
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AUD 0.7093
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5.5 A40 V35.5 mOhmsN - Channel  - 55 C+ 150 C2 WSmd/SmtTSOP - 6ReelSi1 Channel20 V5.3 nCEnhancement Trenchfet
PJA3400_R1_00001


MOSFET 30V N-Channel Enhancement Mode MOSFET
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Panjit 1134
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AUD 0.14
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4.9 A30 V38 mOhmsN - Channel 1.3 V- 55 C+ 150 C1.25 WSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 12 V , + 12 V5.7 nCEnhancement  
CRST055N08N


MOSFET N Trench 85V 120A (Tc) 4V @ 250uA 5.5 mΩ @ 50A,10V TO-220 RoHS
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CRMICRO 0
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AUD 0.4834
Multiples of: 1

                   
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