MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HYG067N07NQ1D


68V 70A 6.8mΩ@10V,30A 93W 3.2V@250uA 139pF@25V N Channel 7.089nF@25V 110nC@10V -55℃~+175℃@(Tj) TO-252-2L MOSFETs ROHS
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HuaYi 2284
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AUD 0.3653
Multiples of: 5

                   
ZXMP10A17E6TA


MOSFET 100V P-Chanl UMOS
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Diodes Incorporated 2284
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AUD 0.5358
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1.6 A100 V350 mOhmsP - Channel 2 V- 55 C+ 150 C1.7 WSmd/SmtSOT - 26 - 6Cut TapeSi1 Channel10 V10.7 nCEnhancement  
PJA3413_R1_00001


MOSFET P Trench 20V 3.4A 1.2V @ 250uA 146 mΩ @ 1.2A,1.8V SOT-23 RoHS
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Panjit 2282
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AUD 0.0815
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TSM036N03PQ56 RLG


MOSFET Power MOSFET, N-CHAN 30V, 95A, 3.6mOhm
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Taiwan Semiconductor 2282
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AUD 0.5768
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124 A30 V3.6 mOhmsN - Channel 1.2 V- 55 C+ 150 C83 WSmd/SmtPDFN - 56 - 8Cut TapeSi1 Channel20 V50 nCEnhancement  
NTD280N60S5Z


MOSFETs Power MOSFET, N-Channel, SUPERFET V, Easy Drive with Zener Diode, 600 V, 13 A, 280 mohm, DPAK Power MOSFET, N-Channel, SUPERFET V, Easy Drive with Zener Diode, 600 V, 13 A, 280 mohm, DPAK
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ON Semiconductor 2281
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AUD 1.8388
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13 A600 V280 mOhmsN - Channel 4 V- 55 C+ 170 C89 WSMD/SMTDPAK - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V17.9 nCEnhancement  
IPD50P04P4L11ATMA2


MOSFET MOSFET_(20V 40V)
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Infineon 2281
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AUD 2.3612
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            Optimos® - P2      
SP2502KT2


SOT-23 MOSFETs ROHS
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Siliup 2279
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AUD 0.0107
Multiples of: 50

                   
BSS123LT1G


100V 0.29A 350mW 2.7@10V,0.2A 2.5V@250uA 1 N-Channel SOT-23 MOSFETs ROHS
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ElecSuper 2279
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AUD 0.0147
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LBSS139WT1G-TP


SOT-323 MOSFETs ROHS
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TECH PUBLIC 2279
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AUD 0.0183
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ISP26DP06NMS


MOSFET SMALL SIGNAL MOSFETS
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Infineon 2064
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AUD 0.3317
Multiples of: 1

                   
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