MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WGD120N03


TO-252 MOSFETs ROHS
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Wild Goose 2298
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AUD 0.1223
Multiples of: 5

                   
HY1503C1


MOSFET N Trench 30V 34A (Tc) 3V @ 250uA 8.5 mΩ @ 10A,10V DFN3*3-8L RoHS
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HuaYi 2298
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AUD 0.166
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BUK7Y12-40EX


N-Channel 40 V 52A (Tc) 65W (Tc) Surface Mount LFPAK56, Power-SO8
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Nexperia 2298
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AUD 0.3431
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52 A40 V9.3 mOhmsN - Channel20 V3 V- 55 C+ 175 C65 WSmd/SmtLFPAK56 - 4ReelSi1 Channel20 V15 nCEnhancement  
XSM6K361NW,LXHF


MOSFETs N-ch MOSFET, 100 V, 3.5 A, 0.069 ohm at 10V, DFN2020B(WF)
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Toshiba 2298
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AUD 0.3776
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3.5 A100 V69 mOhmsN - Channel 2.5 V + 175 C4.3 WSMD/SMTDFN - 6Reel , Cut TapeSi1 Channel20 V3.2 nCEnhancement  
FQD4N20TM


MOSFET 200V N-Ch QFET Logic Level
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ON Semiconductor 2298
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AUD 0.4474
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3 A200 V1.4 Ohmsn - channel  - 55 C+ 150 C2.5 Wsmd/smtTO - 252 - 3Cut Tapesi1 channel30 V enhancement  
BSC009NE2LSATMA1


Transistor: N-MOSFET; unipolar; 25V; 100A; 96W; PG-TDSON-8
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Infineon 2298
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AUD 0.9539
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            Optimos      
TPH3R70APL1,LQ


MOSFETs 100V U-MOS IX-H SOP-Advance(N) 3.7mohm
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Toshiba 2298
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AUD 1.169
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90 A100 V6.2 mOhmsN - Channel 2.5 V- 55 C+ 175 C210 WSMD/SMTSOP - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V67 nCEnhancement  
NTLJD4116NT1G


MOSFET NFET 2X2 30V 4.6A 70MOHM
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ON Semiconductor 2297
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AUD 0.2317
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3.7 A30 V70 mOhmsN - Channel  - 55 C+ 150 C1.5 WSmd/SmtDFN2020 - 6ReelSi2 Channel8 V Enhancement  
QS6J11TR


Mosfet Array 2 P-Channel (Dual) 12V 2A 600mW Surface Mount TSMT6 (SC-95)
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ROHM 2296
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AUD 0.3394
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2 A- 12 V75 mOhmsP - Channel  - 55 C+ 150 C600 mWSmd/SmtT SMT - 6ReelSi2 Channel10 V6.5 nCEnhancement  
STN3N45K3


Transistor: N-MOSFET; unipolar; 450V; 0.6A; 3W; SOT223
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STMicroelectronics 2279
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AUD 0.2948
Multiples of: 5

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