MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NCE55P15K


MOSFET P Trench 55V 15A 3.5V @ 250uA 75 mΩ @ 5A,10V TO-252-2 (DPAK) RoHS
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NCE Power 2313
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AUD 0.3508
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SWD085R68E7T


68V 70A 10.2mΩ TO-252 MOSFETs ROHS
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Sam&wing 2308
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AUD 0.1836
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RD3N045ATTL1


MOSFETs TO252 P-CH 80V 4.5A
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ROHM 2308
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AUD 0.6387
Multiples of: 1

4.5 A80 V750 mOhmsP - Channel 4 V- 55 C+ 150 C17 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel20 V5.9 nCEnhancement  
IPD33CN10NGATMA1


Infineon Technologies MOSFET
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Infineon 2308
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AUD 0.7812
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27 A100 V25 mOhmsN - Channel+/- 20 V3 V- 55 C+ 175 C58 WSmd/SmtTO - 252 - 3Reel-  18 nCEnhancement  
PJA3409_R1_00001


MOSFET /A09/TR/7"/HF/3K/SOT-23/MOS/SOT/NFET-30TMP/NF30T-QI13/PJ///
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Panjit 2307
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AUD 0.1296
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2.9 A30 V110 mOhmsP - Channel 2.1 V- 55 C+ 150 C1.25 WSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V9.8 nCEnhancement  
Hot TSM033NA04LCR RLG


MOSFET Power MOSFET, N-CHL, 40V, 141A, 3.3mOhm
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Taiwan Semiconductor 2305
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AUD 0.996
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141 A40 V3.3 mOhmsN - Channel 1.2 V- 55 C+ 150 C125 WSmd/SmtPDFN - 56 - 8Cut TapeSi1 Channel20 V47 nCEnhancement  
IPP095N20NM6AKSA1


MOSFETs OptiMOS 6 Power-Transistor, 200 V
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Infineon 2305
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AUD 3.4806
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116 A200 V8.7 mOhmsN - Channel 4.5 V- 55 C+ 175 C300 WThrough HolePG - TO220 - 3TubeSi1 Channel20 V53 nCEnhancement OptiMOS
FDC645N


Fairchild Semiconductor MOSFET SSOT-6 N-CH
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ON Semiconductor 2304
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AUD 0.4269
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5.5 A30 V30 mOhmsN - Channel12 V - 55 C+ 150 C1.6 WSmd/SmtSSOT - 6ReelSi1 Channel12 V Enhancement Powertrench
AON7506-MS


30V 50A 9.5mΩ@10V 2.5V N Channel DFN3x3-8L MOSFETs ROHS
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MSKSEMI 2284
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AUD 0.1374
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IPD200N15N3-G


MOSFET N Trench 150V 50A (Tc) 4V @ 90uA 20 mΩ @ 50A,10V PG-TO252-3 RoHS
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Infineon 2238
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AUD 1.5271
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