MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDB44N25TM


Transistor: N-MOSFET; unipolar; 250V; 26.4A; 307W; D2PAK
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ON Semiconductor 2328
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AUD 2.0946
Multiples of: 800

44 A250 V69 mOhmsN - Channel 3 V- 55 C+ 150 C307 WSMD/SMTD2PAK - 3 (TO - 263 - 3)Reel , Cut TapeSi1 Channel- 30 V , 30 V61 nCEnhancement  
PSMN013-100BS,118


N-Channel 100 V 68A (Tc) 170W (Tc) Surface Mount D2PAK
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Nexperia 2328
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AUD 2.7752
Multiples of: 1

68 A100 V13.9 mOhmsN - Channel  - 55 C+ 175 C170 WSmd/SmtD2PAKReelSi1 Channel20 V    
IRFS4321TRRPBF


Infineon IR MOSFET 150V 1 N-CH HEXFET 15mOhms 71nC
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Infineon 2328
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AUD 3.3815
Multiples of: 1

85 A150 V15 mOhmsN - Channel 5 V- 55 C+ 175 C330 WSmd/SmtTO - 263 - 3Tape And ReelSi1 Channel30 V71 nCEnhancement  
IRFS3004TRLPBF


Trans MOSFET N-CH 40V 340A 3-Pin(2+Tab) D2PAK T/R
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Infineon 2328
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AUD 3.5914
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340 A40 V1.4 mOhmsN - Channel 4 V- 55 C+ 175 C380 WSmd/SmtD2PAKReelSi1 Channel20 V160 nC   
AOB290L


MOSFET N CH 100V 140A TO263
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Alpha & Omega 2328
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AUD 3.6425
Multiples of: 800

           -       
IPD320N20N3 G


Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) DPAK
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Infineon 2328
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AUD 6.0496
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34 A200 V32 mOhmsN - Channel 3 V- 55 C+ 175 C136 WSmd/SmtDPAK - 3Reel 1 Channel20 V22 nC  Optimos
BUK9606-75B,118


MOSFET HIGH PERF TRENCHMOS
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Nexperia 2328
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AUD 6.0868
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153 A75 V5.5 mOhmsN - Channel  - 55 C+ 175 C300 WSmd/SmtSOT - 404ReelSi1 Channel15 V Enhancement  
DMN10H100SK3-13


Diodes Incorporated MOSFET 100V N-Ch Enh FET 100mOhm 3V
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Diodes Incorporated 2327
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AUD 0.4663
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18 A100 V100 mOhmsN - Channel 1 V- 55 C+ 150 C37 WSmd/SmtTO - 252 - 3ReelSi1 Channel+/- 20 V25.2 nCEnhancement  
SI4455DY


SOIC-8 MOSFETs ROHS
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TECH PUBLIC 2326
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AUD 0.5469
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ESD409


60V 28A 27m@10V,20A 50W 1.6V@250uA 1PCSPChannel TO-252 MOSFETs ROHS
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ElecSuper 2326
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AUD 0.2716
Multiples of: 1

                   
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