MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TMP2070D


TO-252-3L MOSFETs ROHS
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Tritech-MOS 2328
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AUD 0.2446
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WNM3056-6/TR


DFN-6L(2x2) MOSFETs ROHS
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Will Semiconductor 2328
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AUD 0.3083
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PJQ5437E-AU_R2_006A1


MOSFETs 30V P-Channel Enhancement Mode MOSFET
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Panjit 2328
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AUD 0.5007
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42 A30 V15 mOhmsP - Channel 2.5 V- 55 C+ 175 C21 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 25 V , + 25 V32 nCEnhancementAEC - Q101 
RH7L03BBLFRATCB


MOSFETs Discrete Semiconductors, MOSFETs, Nch 60V 35A, DFN3333T8LSAB, Power MOSFET for Automotive
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ROHM 2328
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AUD 0.7569
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35 A60 V26.6 mOhmsN - Channel 4 V- 55 C+ 175 C33 WSMD/SMTDFN - 8Reel , Cut TapeSi1 Channel20 V6.6 nCEnhancementAEC - Q101 
SI7850ADP-T1-GE3


MOSFET 60V Vds 20V Vgs PowerPAK SO-8
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Vishay 2328
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AUD 0.9278
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12 A60 V19.5 mOhmsN - Channel 2.8 V- 55 C+ 150 C35.7 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel20 V11.1 nC   
RH7G04BBLFRATCB


MOSFETs Discrete Semiconductors, MOSFETs, Nch 40V 40A, DFN3333T8LSAB, Power MOSFET for Automotive
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ROHM 2328
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AUD 1.1591
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40 A40 V3.2 mOhmsN - Channel 4 V- 55 C+ 175 C75 WSMD/SMTDFN - 8Reel , Cut TapeSi1 Channel20 V28 nCEnhancementAEC - Q101 
SI7110DN-T1-E3


MOSFET 20V 21.1A 0.0053Ohm
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Vishay 2328
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AUD 1.5416
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21.1 A20 V5.3 mOhmsN - Channel 2.5 V- 55 C+ 150 C3.8 WSMD/SMTPOWERPAK - 1212 - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V14 nCEnhancement TrenchFET
FDB28N30TM


Transistor: N-MOSFET; unipolar; 300V; 28A; 250W; D2PAK
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ON Semiconductor 2328
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AUD 1.7065
Multiples of: 800

            Unifet      
IRLR7843TRPBF-JSM


TO-252 MOSFETs ROHS
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JSMSEMI 2318
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AUD 0.3776
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SI9948AEY


SOP-8 MOSFETs ROHS
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Youtai 67
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AUD 0.2541
Multiples of: 5

                   
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First...901902903904905...

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