MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CRTD055N03L


MOSFET N Trench 30V 50A (Tc) 1.8V @ 250uA 5.5 mΩ @ 25A,10V TO-252 RoHS
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CRMICRO 2415
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AUD 0.1793
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STD25NF10LA


Transistor: N-MOSFET; unipolar; 100V; 21A; 100W; DPAK
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STMicroelectronics 2412
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AUD 1.0354
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   N Channel               
RD3E07BBJHRBTL


MOSFETs Pch -30V -78A, TO-252 (DPAK), Power MOSFET for Automotive
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ROHM 2412
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AUD 1.0442
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78 A30 V8.5 mOhmsP - Channel 2.5 V- 55 C+ 175 C77 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 5 V52 nCEnhancement  
TK16V60W5,LVQ


MOSFET PWR MOSFET DTMOS PD=139W F=1
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Toshiba 2412
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AUD 3.2507
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15.8 A600 V245 mOhmsN - Channel 3 V- 55 C+ 150 C139 WSmd/SmtDFN8X8 - 5Cut TapeSi1 Channel10 V43 nCEnhancement Dtmosiv
WMO053NV8HGS


Transistor: N-MOSFET; unipolar; TO252
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Wayon 2411
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AUD 0.7522
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IPD65R600C6BTMA1


Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
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Infineon 2411
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AUD 1.0504
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            coolmos      
BSS806N H6327


Infineon Technologies MOSFET N-Ch 20V 2.3A SOT-23-3
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Infineon 2410
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AUD 0.1284
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2.3 A20 V41 mOhmsN - Channel 550 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3-Si1 Channel20 V1.7 nCEnhancementAec - Q101 
LWS6080A4


TO-252 MOSFETs ROHS
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Lewa Micro 2410
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AUD 0.1497
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MDT18N10D


100V 18A 90m@10V,5A 31W 1.8V@250uA 1 N-Channel TO-252 MOSFETs ROHS
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Minos 2410
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AUD 0.1106
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30N06


60V 30A 41.5W 30mΩ@10V,10A 1.7V@250uA null TO-252 MOSFETs ROHS
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Yongyutai Electronics 2410
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AUD 0.1642
Multiples of: 5

                   
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