MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPT60R055CFD7XTMA1


N-Channel 600V 44A (Tc) 236W (Tc) Surface Mount PG-HSOF-8-1
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Infineon 2417
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AUD 5.1224
Multiples of: 1

          8 - POWERSFNTape And ReelMosfet (Metal Oxide)      
SP20N08TH


TO-252 MOSFETs ROHS
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Siliup 2415
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AUD 0.0544
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STN4900


60V 5.3A 2.8W null - MOSFETs ROHS
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STANSON Tech 2415
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AUD 0.0699
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SP6005DP8


SOP-8L MOSFETs ROHS
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Siliup 2415
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AUD 0.1138
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FDD6776A(UMW)


TO-252 MOSFETs ROHS
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Youtai 2415
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AUD 0.1533
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SSM3J168F,LF


MOSFET LowON Res MOSFET ID=--0.4A VDSS=-60V
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Toshiba 2415
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AUD 0.1614
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400 mA60 V1.3 OhmsP - Channel 2 V + 150 C1200 mWSmd/SmtSOT - 346 - 3Cut TapeSi1 Channel- 20 v , 10 V3 nCEnhancement  
FDD5810(UMW)


TO-252 MOSFETs ROHS
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Youtai 2415
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AUD 0.1628
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SP30P06TH


TO-252-2L MOSFETs ROHS
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Siliup 2415
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AUD 0.194
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IRF3415PBF


MOSFET N Trench 150V 43A 4V @ 250uA 42 mΩ @ 22A,10V TO-220 (TO-220-3) RoHS
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Infineon 2406
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AUD 1.4169
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43 A150 V42 mOhmsN - Channel    200 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V133.3 nC   
PJM3400NSA


MOSFET N Trench 30V 5.8A 1.4V @ 250uA 41 mΩ @ 5.8A,10V SOT-23 RoHS
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Pingjingsemi 2318
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AUD 0.0471
Multiples of: 10

                   
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