MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXTT140N075L2HV


Discrete Semiconductor Modules Disc Mosfet N-CH Linear L2 TO-268AA
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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AUD 38.3209
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140 A75 V11 mOhmsN - Channel 2 V- 55 C+ 150 C540 WSmd/SmtTO - 268HV - 3Tube  20 V   Linearl2
APT40SM120B


APT40SM120B
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Microchip 0
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AUD 38.3358
Multiples of: 1

           -       
APT50M75B2LLG


MOSFET FG, MOSFET, 500V, TO-247 T-MAX, RoHS
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Microchip 0
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AUD 38.3385
Multiples of: 1

            POWER MOS 7®      
APT38F80B2


MOSFET FG, FREDFET, 800V, TO-247 T-MAX
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AUD 38.52
Multiples of: 1

41 A800 V190 mOhmsN - Channel 2.5 V- 55 C+ 150 C1.04 kWThrough HoleTO - 247 - 3TubeSi1 Channel+/- 30 V260 nCEnhancement  
NTE2906


Transistor: N-MOSFET; 200V; 8A; TO3
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NTE 0
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AUD 38.5543
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NXV65HR82DZ2


MOSFET APM16 CAA SF3 FRFET 82MOHM 650V L-FORMING
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ON Semiconductor 0
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AUD 38.7043
Multiples of: 72

26 A650 V82 mOhmsN - Channel 5 V- 40 C+ 125 C126 WThrough HoleAPMCA - 16TubeSi4 Channel- 20 V , + 20 V79.7 nCEnhancement  
IXFR120N20


MOSFET 200V 105A
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AUD 38.7549
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105 A200 V17 mOhmsn - channel20 V - 55 C+ 150 C400 Wsmd/smtTO - 247 - 3Tube    enhancement  
APT44F80L


MOSFET FG, FREDFET, 800V, TO-264
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Microchip 0
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AUD 38.86
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47 A800 V210 mOhmsN - Channel 4 V- 55 C+ 150 C1.135 kWThrough HoleTO - 264 - 3TubeSi +/- 30 V305 nCEnhancement  
APT37M100B2


MOSFET FG, MOSFET, 1000V, TO-247 T-MAX
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Microchip 0
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AUD 38.8654
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37 A1000 V330 mOhmsN - Channel 4 V- 55 C+ 150 C1.135 kWThrough HoleT - MAXReelSi +/- 30 V305 nCEnhancement  
IXBA16N170AHV


MOSFET IGBT BIMOSFET-HIGH VOLT
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AUD 38.94
Multiples of: 1

         Smd/SmtTO - 263 - 3TubeSi     Bimosfet
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