MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXFK66N85X


MOSFET 850V Ultra Junction X-Class Pwr MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 40.8754
Multiples of: 1

66 A850 V65 mOhmsn - channel 3.5 V- 55 C+ 150 C1.25 kWthrough holeTO - 264 - 3Tubesi1 channel30 V230 nCenhancement hiperfet
UF3C120040K4S


MOSFET 1200V/40mOhm, SiC, FAST CASCODE, G3, TO-247-4L, REDUCED Rth
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

UnitedSiC 0
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AUD 40.8822
Multiples of: 1

65 A1200 V45 mOhmsN - Channel 4 V- 55 C+ 175 C429 WThrough HoleTO - 247 - 4TubeSic1 Channel25 V51 nCEnhancement  
APT20M22LVFRG


MOSFET FG, FREDFET, 200V, TO-264, RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip 0
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AUD 41.16
Multiples of: 1

100 A200 V22 mOhmsN - Channel 4 V- 55 C+ 150 C520 WThrough HoleTO - 264 - 3TubeSi 30 V290 nCEnhancement Power Mos V
IXFR32N100P


MOSFET 32 Amps 1000V
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IXYS 0
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AUD 41.3556
Multiples of: 1

18 A1 kV340 mOhmsN - Channel  - 55 C+ 150 C320 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V Enhancement Hiperfet
IXFK20N120P


MOSFET 20 Amps 1200V 1 Rds
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IXYS 0
6 to 16 Weeks Calender.png

AUD 41.6825
Multiples of: 1

20 A1.2 kV570 mOhmsN - Channel 6.5 V- 55 C+ 150 C780 WThrough HoleTO - 264 - 3TubeSi1 Channel30 V193 nCEnhancement Hiperfet
APT1001RSVRG


MOSFET FG, MOSFET, 1000V, 1.0_OHM, D3, TO-268, RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip 0
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AUD 41.7
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            POWER MOS 5®      
3N164


3N164
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Vishay 0
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AUD 41.7062
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IXFX30N100Q2


MOSFET 30 Amps 1000V 0.35 Rds
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IXYS 0
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AUD 41.7114
Multiples of: 1

30 A1 kV400 mOhmsn - channel30 V - 55 C+ 150 C735 Wthrough holePLUS - 247 - 3Tubesi1 channel30 V enhancement hyperfet
APT26F120L


MOSFET FG, FREDFET, 1200V, TO-264
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip 0
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AUD 41.7863
Multiples of: 1

27 A1200 V480 mOhmsN - Channel 4 V- 55 C+ 150 C1.135 kWThrough HoleTO - 264 - 3ReelSi 30 V300 nCEnhancement Power Mos 8
NTE2392


Transistor: N-MOSFET; 100V; 33A; TO3
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AUD 41.8292
Multiples of: 1

                   
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