MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AUIRFS3206TRL


International Rectifier MOSFET 60V 210A 3 mOhm Automotive MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 9
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AUD 19.5758
Multiples of: 1

210 A60 V2.4 mOhmsn - channel   + 175 C300 Wsmd/smtD - PAK - 3Reelsi1 channel 120 nC aec - q101 
NTHL040N65S3HF


MOSFET N-Channel 650V 65A TO-247 Tube
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ON Semiconductor 2
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AUD 35.029
Multiples of: 1

65 A700 V32 mOhmsN - Channel 3 V- 55 C+ 150 C446 WThrough HoleTO - 247 - 3TubeSi1 Channel10 V159 nCEnhancement Superfet Iii
IXFK90N20Q


MOSFET 200V 90A
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IXYS 0
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AUD 19.4443
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90 A200 V22 mOhmsn - channel20 V - 55 C+ 150 C500 Wthrough holeTO - 264 - 3Tube    enhancement  
FMP26-02P


MOSFET PHASE LEG MOSFET MOD H-BRIDGE -200V -17A
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IXYS 0
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AUD 19.4529
Multiples of: 1

26 A , 17 A200 V60 mOhms , 170 mOhmsn and p - channel  - 55 C+ 150 C125 Wthrough holeISOPLUS I4PAK - 5Tubesi2 channel20 V    
G3R160MT17J


MOSFET 1700V 160mO TO-263-7 G3R SiC MOSFET
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GeneSiC Semiconductor 0
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AUD 19.4585
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18 A1.7 kV160 mOhmsN - Channel 2.7 V- 55 C+ 175 C145 WSMD/SMTTO - 263 - 7TubeSiC1 Channel- 5 V , + 15 V29 nCEnhancement  
STW70N60DM6


MOSFET N-channel 600 V, 0.037Ohm typ., 62A MDmesh DM6 Power MOSFET in a TO-247 package
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STMicroelectronics 0
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AUD 19.4712
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62 A600 V42 mOhmsN - Channel     Through HoleTO - 247 - 3TubeSi1 Channel 106 nCEnhancement  
EPC2031


60V 31A 2.6m@30A,5V 2.5V@15mA 1PCSNChannel - MOSFETs ROHS
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TDK 0
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AUD 19.5819
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STW70N65DM6-4


MOSFET N-channel 650 V, 36 mOhm typ 68 A MDmesh DM6 Power MOSFET
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STMicroelectronics 0
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AUD 19.6269
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IXFH70N65X3


MOSFET DISCRETE MOSFET 70A 650V X3 TO
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IXYS 0
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AUD 19.6731
Multiples of: 1

70 A650 V44 OhmsN - Channel 5.2 V- 55 C+ 150 C780 WThrough Hole TubeSi1 Channel- 20 V , + 20 V66 nCEnhancement  
STFW60N65M5


N-Channel 650 V 46A (Tc) 79W (Tc) Through Hole TO-3PF
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STMicroelectronics 0
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AUD 19.7166
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46 A650 V59 mOhmsn - channel  - 55 C+ 150 C79 Wthrough holeTO - 3P - 3Tube 1 channel25 V    
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