MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AIMDQ75R016M1HXUMA1


MOSFETs AUTOMOTIVE_SICMOS
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Infineon 630
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AUD 21.1357
Multiples of: 1

           Reel , Cut TapeSi     CoolSiC
FMW47N60S1HF


MOSFET, N-CH, 600V, 47A, TO-247-3
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Fuji 0
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AUD 21.024
Multiples of: 1

   n channel               
IXFK180N07


MOSFET 180 Amps 70V 0.006 Rds
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IXYS 0
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AUD 21.0415
Multiples of: 1

180 A70 V6 mOhmsn - channel20 V - 55 C+ 150 C560 Wthrough holeTO - 264 - 3Tube    enhancement  
UF3C065030K3S


MOSFET 650V/30mOhm, SiC, FAST CASCODE, G3, TO-247-3L, REDUCED Rth
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UnitedSiC 0
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AUD 21.0514
Multiples of: 1

85 A650 V N - Channel     Through HoleTO - 247 - 3TubeSic1 Channel  Enhancement  
STW56NM60N


MOSFET N-Ch 600V 0.05 Ohm 45A MDmesh II FET
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STMicroelectronics 0
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AUD 21.085
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28 A600 V60 mOhmsn - channel 4 V  300 Wthrough holeTO - 247 - 3Tube 1 channel25 V150 nC   
IXTT2N170D2


MOSFET 1700V 2A
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IXYS 0
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AUD 21.09
Multiples of: 30

2 A1.7 kV6.5 Ohmsn - channel  - 55 C+ 150 C568 Wsmd/smtTO - 268 - 3Tubesi 20 V110 nC   
NTBGS001N06C


MOSFET NFET D2PAK7 60V 1.0MO
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ON Semiconductor 0
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AUD 21.1154
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IXFX180N10


MOSFET 100V 180A
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IXYS 0
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AUD 21.1232
Multiples of: 1

180 A100 V8 mOhmsn - channel20 V - 55 C+ 150 C560 Wthrough holePLUS - 247 - 3Tube    enhancement  
IXFB100N50P


MOSFET 100 Amps 500V 0.05 Ohms Rds
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IXYS 0
6 to 16 Weeks Calender.png

AUD 21.16
Multiples of: 25

100 A500 V49 mOhmsn - channel 5 V- 55 C+ 150 C1.25 kWthrough holePLUS - 264 - 3Tubesi1 channel30 V240 nCenhancement polarhv, hiperfet
UF3C065040K4S


MOSFET 650V/40mOhm, SiC, FAST CASCODE, G3, TO-247-4L, REDUCED Rth
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UnitedSiC 0
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AUD 21.1726
Multiples of: 1

54 A650 V52 OhmsN - Channel 4 V- 55 C+ 175 C326 WThrough HoleTO - 247 - 4TubeSic1 Channel25 V43 nCEnhancement  
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