MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTMTS0D4N04CTXG


MOSFET AFSM T6 40V SG NCH
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ON Semiconductor 15
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AUD 23.6335
Multiples of: 1

                   
IXTA94N20X4


N-Channel 200V 94A (Tc) 360W (Tc) Surface Mount TO-263 (IXTA)
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IXYS 0
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AUD 13.97
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94 A200 V10.6 mOhmsN - Channel 4.5 V- 55 C+ 175 C360 WSMD/SMTTO - 263 - 3TubeSi1 Channel- 20 V , 20 V77 nCEnhancement  
P85W28HP2F-7071


MOSFET Hi-PotMOS Power MOSFET Through Hole
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Shindengen 0
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AUD 14.6032
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            Si      
IXTK40P50P


MOSFET -40.0 Amps -500V 0.230 Rds
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IXYS 0
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AUD 14.6217
Multiples of: 2

40 A500 V230 mOhmsp - channel 2 V- 55 C+ 150 C890 Wthrough holeTO - 264 - 3Tubesi1 channel10 V205 nCenhancement  
IPW60R024CFD7XKSA1


MOSFET HIGH POWER_NEW
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Infineon 0
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AUD 14.6375
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77 A650 V24 mOhmsN - Channel 4 V- 55 C+ 150 C320 WThrough HoleTO - 247 - 3TubeSi1 Channel- 20 V , 20 V183 nCEnhancement  
FCH041N60F_F085


Fairchild Semiconductor MOSFET Auto SuperFET2 600V 41mOhm, 76A, FRFET
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ON Semiconductor 0
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AUD 14.6607
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76 A600 V98 mOhmsn - channel 3 V- 55 C+ 150 C595 Wthrough holeTO - 247 - 3Tubesi1 channel+/- 20 V267 nCenhancement superfet
IPW60R045CP


MOSFET N-Ch 650V 60A TO247-3 CoolMOS CP
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Infineon 0
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AUD 14.6614
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60 A600 V40 mOhmsN - Channel 2.5 V- 55 C+ 150 C431 WThrough HoleTO - 247TubeSi1 Channel20 V190 nCEnhancement Coolmos
IXFX120N30T


MOSFET 120V 300V
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IXYS 0
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AUD 14.663
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120 A300 V24 mOhmsn - channel 5 V- 55 C+ 150 C960 Wthrough holeTO - 247 - 3Tubesi1 channel20 V265 nCenhancement hiperfet
IMW120R030M1H


MOSFET SIC DISCRETE
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Infineon 0
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AUD 14.6658
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IXTH16N10D2


MOSFET N-CH 100V 16A MOSFET
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IXYS 0
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AUD 14.6667
Multiples of: 1

16 A100 V64 mOhmsn - channel  - 55 C+ 175 C830 Wthrough holeTO - 247 - 3Tubesi1 channel20 V225 nCdepletion  
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