MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXFH40N85X


MOSFET 850V Ultra Junction X-Class Pwr MOSFET
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IXYS 56
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AUD 13.2038
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40 A850 V145 mOhmsN - Channel 3.5 V- 55 C+ 150 C860 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V98 nCEnhancement Hiperfet
IXFT100N30X3HV


MOSFET DiscMSFT NChUltrJnctn X3Class TO-268AA
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IXYS 0
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AUD 15.3507
Multiples of: 1

           Tube      Hiperfet
SIHW61N65EF-GE3


MOSFET N-Ch 700V Vds w/ Fast Body Diode
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Vishay 0
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AUD 15.3846
Multiples of: 1

           TubeSi      
IXTH120N20X4


MOSFETs 200V, 120A, Ultra junction X4, TO-247 package, MOSFET
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IXYS 0
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AUD 15.3978
Multiples of: 1

                   
IXTH12N150


MOSFET >1200V High Voltage Power MOSFET
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IXYS 0
6 to 16 Weeks Calender.png

AUD 15.4131
Multiples of: 1

12 A1.5 kV2 OhmsN - Channel 4.5 V- 55 C+ 150 C890 WThrough HoleTO - 247 - 3TubeSi 30 V106 nCEnhancement  
APT43F60B2


MOSFET FG, FREDFET, 600V, TO-247 T-MAX
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Microchip 0
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AUD 15.418
Multiples of: 1

45 A600 V120 mOhmsN - Channel 2.5 V- 55 C+ 150 C780 WThrough HoleTO - 247 - 3 Si1 Channel+/- 30 V215 nCEnhancement  
STWA68N60M6


MOSFET PTD HIGH VOLTAGE
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STMicroelectronics 0
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AUD 15.425
Multiples of: 1

63 A600 V41 mOhmsN - Channel 3.25 V- 55 C+ 150 C390 WThrough HoleTO - 247 - 3 Si1 Channel25 V106 nCEnhancement  
IXTH62N65X2


MOSFET MSFT N-CH ULTRA JNCT X2 3&44
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IXYS 0
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AUD 15.4625
Multiples of: 1

62 A650 V50 mOhmsN - Channel 2.7 V- 55 C+ 150 C780 WThrough HoleTO - 247 - 3Tube  30 V   Hiperfet
IXTK100N25P


MOSFET 100 Amps 250V 0.027 Rds
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IXYS 0
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AUD 15.4629
Multiples of: 1

100 A250 V27 mOhmsN - Channel  - 55 C+ 150 C600 WThrough HoleTO - 264 - 3TubeSi1 Channel20 V Enhancement  
STW68N60M6-4


MOSFET N-channel 600 V, 35 mOhm typ 63 A MDmesh M6 Power MOSFET
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STMicroelectronics 0
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AUD 15.4646
Multiples of: 1

                   
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