MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NVMTS1D2N08H


MOSFET 80V 337A 1.1mOhms
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ON Semiconductor 11
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between Fri. 02 Oct to Wed. 07 Oct
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AUD 10.7383

Multiples of: 1

           Cut Tape       
APT42F50B


N-Channel 500 V 42A (Tc) 625W (Tc) Through Hole TO-247 [B]
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Microchip 0
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AUD 10.7021

Multiples of: 1

42 A500 V110 mOhmsn - channel 4 V- 55 C+ 150 C625 Wthrough holeTO - 247 - 3Tubesi 30 V170 nCenhancement power mos 8
STO67N60DM6


MOSFET N-channel 600 V 48 mOhm typ. 33 A MDmesh DM6 Power MOSFET
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STMicroelectronics 0
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AUD 10.7178

Multiples of: 1

58 A600 V59 mOhmsN - Channel 4.75 V- 55 C+ 150 C240 WSMD/SMT Mdmesh , Cut Tape , Reel , ReelSi1 Channel- 25 V , + 25 V72.5 nCEnhancement MDmesh
IXFH21N50F


MOSFET IXFH21N50F F-Class HiPerRF Power MOSFETs
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IXYS 0
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AUD 10.7381

Multiples of: 1

21 A500 V250 mOhmsN - Channel  - 55 C+ 150 C300 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V Enhancement  
BUZ901D


MOSFET, N, TO-3
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TT ELECTRONICS 0
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AUD 10.7625

Multiples of: 1

   N Channel               
JANTX2N6790


MOSFET
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Microchip 0
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AUD 10.7709

Multiples of: 1

 200 V n - channel  - 55 C+ 150 C0.8 Wthrough holeTO - 205AF - 3 si1 channel20 V    
IXFT14N80P


MOSFET 14 Amps 800V 0.72 Rds
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IXYS 0
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AUD 10.78

Multiples of: 300

14 A800 V720 mOhmsN - Channel    400 WSmd/SmtTO - 268 - 3TubeSi     Hiperfet
IRFPE50PBF


MOSFET N Trench 800V 7.8A 4V @ 250uA 1.2 Ω @ 4.7A,10V TO-247 (AC) RoHS
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Infineon 0
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AUD 10.7823

Multiples of: 1

                   
IXTA130N15X4


MOSFET DISCMSFT NCHULTRJNCTN X3CLASS
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IXYS 0
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AUD 10.7905

Multiples of: 1

130 A150 V8 mOhmsN - Channel 2.5 V- 55 C+ 150 C400 WSmd/SmtTO - 263 - 3 Si1 Channel20 V87 nCEnhancement Hiperfet
IPW60R080P7


Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 10.7908

Multiples of: 1

            Coolmos P7      
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