MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPW60R090CFD7


MOSFET HIGH POWER_NEW
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 16
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AUD 6.1867
Multiples of: 1

                   
IPD50R399CP


MOSFET N-Ch 550V 9A DPAK-2 CoolMOS CP
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Infineon 4
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AUD 6.1645
Multiples of: 1

                   
IPP60R120P7


Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3
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Infineon 3
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AUD 6.9681
Multiples of: 1

            Coolmos P7      
BUK663R5-55C


Trans MOSFET N-CH 55V 120A Automotive 3-Pin(2+Tab) D2PAK
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NXP 0
6 to 16 Weeks Calender.png

AUD 6.1522
Multiples of: 1

120 A  n    263 Wsurface mount      enhancement  
BUK664R6-40C


Trans MOSFET N-CH 40V 100A Automotive 3-Pin(2+Tab) D2PAK
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NXP 0
6 to 16 Weeks Calender.png

AUD 6.1522
Multiples of: 1

100 A  n    158 Wsurface mount      enhancement  
ALD110900PAL


MOSFET Dual EPAD(R) N-Ch
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Advanced Linear Devices 0
6 to 16 Weeks Calender.png

AUD 6.16
Multiples of: 1

12 mA10 V500 Ohms , 500 OhmsN - Channel 20 mV0 C+ 70 C500 mWThrough HolePDIP - 8TubeSi2 Channel10.6 V Depletion  
ALD114835SCL


MOSFET Quad EPAD(R) N-Ch
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Advanced Linear Devices 0
6 to 16 Weeks Calender.png

AUD 6.1754
Multiples of: 50

12 mA10 V540 Ohmsn - channel 3.55 V0 C+ 70 C500 mW (1/2 w)smd/smtSOIC - 16Tubesi4 channel10.6 V depletion  
AUIRFS4127


Infineon IR MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 6.1808
Multiples of: 1

72 A200 V n - channel    375 Wsmd/smtTO - 252 - 3Tubesi 20 V100 nC aec - q101 
STI270N4F3


STMicroelectronics MOSFET N-Ch, 40V-2.1ohms 160A
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STMicroelectronics 0
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AUD 6.1808
Multiples of: 1

120 A40 V2.6 mOhmsn - channel  - 55 C+ 175 C330 Wthrough holeI2PAK - 3Tubesi1 channel20 V enhancementaec - q101 
IPL60R115CFD7AUMA1


MOSFET HIGH POWER_NEW
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
6 to 16 Weeks Calender.png

AUD 6.1808
Multiples of: 1

22 A600 V115 mOhmsN - Channel 3.5 V- 40 C+ 150 C124 WSmd/SmtVSON - 4Cut TapeSi1 Channel20 V42 nCEnhancement  
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