MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF7749L2TR1PBF


MOSFET 60V 200A 1.5mOhm 220nC Qg
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 4.9028
Multiples of: 1

200 A60 V1.1 mOhmsn - channel20 V4 V + 175 C125 Wsmd/smtDirectfet - 15Reel   200 nC   
NTE2913


Transistor: N-MOSFET; 55V; 110A; TO247
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NTE 0
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AUD 4.9029
Multiples of: 1

                   
IXTQ26N60P


MOSFET 26.0 Amps 600 V 0.27 Ohm Rds
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IXYS 0
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AUD 4.9029
Multiples of: 30

26 A600 V270 mOhmsn - channel 5 V- 55 C+ 150 C460 Wthrough holeTO - 3P - 3Tubesi1 channel30 V72 nCenhancement polarhv
IRFD9123


MOSFET P-CH 100V 1A 4-DIP
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Vishay 0
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AUD 4.909
Multiples of: 1

                   
IPB180N08S402ATMA1


Infineon Technologies MOSFET N-CHANNEL 7580V
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Infineon 0
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AUD 4.9103
Multiples of: 1

180 A80 V1.8 mOhmsn - channel+/- 20 V3 V- 55 C+ 175 C277 Wsmd/smtPG - TO 263 - 7 - 3Reel-1 channel20 V128 nCenhancementaec - q101 
SIHP28N60EF-GE3


N-Channel 600 V 28A (Tc) 250W (Tc) Through Hole TO-220AB
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Vishay 0
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AUD 4.9107
Multiples of: 1

28 A600 V123 mOhmsN - Channel 2 V- 55 C+ 150 C250 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V120 nC  Ef Series
IXKH24N60C5


MOSFET 24 Amps 600V
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IXYS 0
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AUD 4.9151
Multiples of: 1

24 A600 V165 mOhmsn - channel    250 Wthrough holeTO - 247 - 3Tubesi1 channel20 V enhancement coolmos
SW38N65KF


MOSFET N Trench 650V 38A (Tc) 4V @ 250uA 118 mΩ @ 19A,10V TO-247 RoHS
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Sam&wing 0
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AUD 4.9153
Multiples of: 1

                   
SIHH28N60E-T1-GE3


MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
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Vishay 0
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AUD 4.9161
Multiples of: 1

29 A600 V85 mOhmsN - Channel 4 V- 55 C+ 150 C202 WSmd/SmtPOWERPAK - 8X8 - 4Cut TapeSi1 Channel30 V86 nCEnhancement  
SUM110N06-3M9H-E3


MOSFET 60V 110A 375W 3.9mohm @ 10V
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Vishay 0
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AUD 4.9166
Multiples of: 1

   n - channel  - 55 C+ 175 C smd/smtTO - 263Reelsi     trenchfet
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First...53215322532353245325...

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