MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFPS3815PBF


Transistor: N-MOSFET; unipolar; 150V; 105A; 441W; SUPER247
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 4
Ships to you
between Fri. 02 Oct to Wed. 07 Oct Calender.png

AUD 8.6331
Multiples of: 1

                Enhancement  
BTS247ZE3062AATMA2


Infineon Technologies MOSFET N-Ch 55V 19A D2PAK-4
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Infineon 0
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AUD 4.8274
Multiples of: 1

19 A55 V18 mOhmsn - channel 1.6 V- 40 C+ 175 C120 Wsmd/smtPG - TO 220 - 5Reelsi1 channel20 V60 nCenhancementaec - q101 
SIHP16N50C-BE3


MOSFET 500V N-CH MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
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AUD 4.83
Multiples of: 1

16 A500 V380 mOhmsN - Channel 5 V- 55 C+ 150 C250 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 30 V , + 30 V68 nCEnhancement  
STW75NF30


MOSFET N-channel 300 V, 60A II Power MOSFET
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STMicroelectronics 0
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AUD 4.8311
Multiples of: 30

   n - channel  - 55 C+ 150 C through holeTO - 247Tube       
IRF7799L2TRPBF


Transistor: N-MOSFET; unipolar; 250V; 35A; 125W; DirectFET
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Infineon 0
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AUD 4.836
Multiples of: 1

            hexfet®      
R6025FNZC8


ROHM Semiconductor 10V Drive Nch MOSFET
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ROHM 0
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AUD 4.84
Multiples of: 1

25 A600 V140 mOhmsN - Channel 3 V- 55 C+ 150 C150 WThrough HoleTO - 3PF - 3BulkSi1 Channel30 V85 nCEnhancement  
STW33N60M6


MOSFET N-channel 600 V, 105 mOhm typ., 26 A MDmesh M6 Power MOSFET in a TO-247 package
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STMicroelectronics 0
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AUD 4.8432
Multiples of: 1

26 A600 V125 mOhmsN - Channel     Through HoleTO - 247 - 3TubeSi1 Channel     
IXTP1R4N120P


MOSFET 1.4 Amps 1200V 15 Rds
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IXYS 0
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AUD 4.8438
Multiples of: 1

1.4 A1.2 kV13 Ohmsn - channel  - 55 C+ 150 C86 Wthrough holeTO - 220 - 3Tubesi1 channel20 V enhancement  
IAUA250N04S6N005AUMA1


MOSFET MOSFET_(20V 40V)
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 4.8456
Multiples of: 1

                   
ALD110904PAL


MOSFET Dual N-Channel EPAD
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Advanced Linear Devices 0
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AUD 4.8507
Multiples of: 50

12 mA10 V500 Ohmsn - channel  0 C+ 70 C500 mW (1/2 w)through holePDIP - 8Tubesi2 channel10.6 V depletion  
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