MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IQFH36N04NM6ATMA1


MOSFETs TRENCH <= 40V
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AUD 3.4571
Multiples of: 1

656 A40 V360 uOhmsN - Channel 2.8 V- 55 C+ 175 C300 WSMD/SMTTSON - 12Reel , Cut TapeSi1 Channel- 20 V , + 20 V206 nCEnhancement OptiMOS
SIR120DP-T1-RE3


MOSFET N-Channel 80 V D-S MOSFET
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AUD 3.4602
Multiples of: 1

106 A80 V3.55 mOhmsN - Channel 2 V- 55 C+ 150 C100 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel20 V62.5 nCEnhancement Powerpak
IRFP21N60LPBF


N-Channel 600 V 21A (Tc) 330W (Tc) Through Hole TO-247AC
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Vishay 0
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AUD 3.4607
Multiples of: 1

   N - Channel  - 55 C+ 150 C Through HoleTO - 247ACTubeSi      
IPP60R120C7XKSA1


MOSFET HIGH POWER_NEW
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AUD 3.4625
Multiples of: 1

 600 V       Through HoleTO - 220 - 3TubeSi     Coolmos
KN3M65017D


1.7kV 7A 62W 650mΩ@20V,7A null TO-247-3 MOSFETs ROHS
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KNSCHA 0
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AUD 3.4629
Multiples of: 1

                   
IPB65R190C6


MOSFET 650V CoolMOS C6 Power Transistor
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AUD 3.4629
Multiples of: 1

20.2 A650 V190 mOhmsn - channel  - 55 C+ 150 C151 Wsmd/smtTO - 263 - 3Reelsi1 channel20 V73 nC  coolmos
AUIRFB3207


International Rectifier MOSFET AUTO 75V 1 N-CH HEXFET 7mOhms
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AUD 3.465
Multiples of: 1

170 A75 V9 mOhmsn - channel  - 55 C 300 Wthrough holeTO - 220 - 3Tubesi1 channel20 V180 nCenhancement  
IPB70N12S311ATMA1


MOSFET N-CHANNEL 100+
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AUD 3.4685
Multiples of: 1

         Smd/SmtTO - 263 - 3Cut TapeSi    Aec - Q101 
IPL65R190E6AUMA1


Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-VSON-4
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AUD 3.4687
Multiples of: 1

            Coolmos      
NVBLS0D5N04M8TXG


N-Channel 40 V 300A (Tc) 429W (Tj) Surface Mount 8-HPSOF
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ON Semiconductor 0
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AUD 3.4693
Multiples of: 2000

300 A40 V570 uOhmsN - Channel 2 V- 55 C+ 175 C429 WSmd/SmtMO - 299A - 8Cut TapeSi1 Channel20 V296 nCEnhancementAec - Q101 
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