MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFB4137PBF


International Rectifier MOSFET 300V, 40A, 69 mOhm 83 nC Qg, TO-220AB
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 44
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AUD 7.3936
Multiples of: 1

38 A300 V56 mOhmsN - Channel20 V5 V- 55 C+ 175 C341 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V125 nCEnhancement  
FCP290N80


MOSFET 800V SuperFET2 N-Chnl Mosfet
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 3.24
Multiples of: 1

17 A800 V290 mOhmsn - channel 2.5 V- 55 C+ 150 C212 Wthrough holeTO - 220 - 3Bulksi1 channel+/- 20 v , +/- 30 V58 nCenhancement superfet ii
TPCA8048-H(TE12L,Q)


SMD MOSFET N-CH 60V 35A 8-SOP
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Toshiba 0
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AUD 3.24
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           -       
LCA110


RELAY, MOSFET
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Clare 0
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AUD 3.2419
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PSMN5R0-100PS,127


MOSFET N-Ch 100V 5 mOhms
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NXP 0
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AUD 3.2451
Multiples of: 1

110 A100 V5 mOhmsn - channel 3 V- 55 C+ 175 C338 Wthrough holeTO - 220 - 3Tubesi1 channel20 V170 nC   
STF12NM60N


MOSFET N Ch 600V 0.35 Ohm 10A Pwr MOSFET
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STMicroelectronics 0
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AUD 3.2472
Multiples of: 1000

10 A600 V410 mOhmsn - channel  - 55 C+ 150 C25 Wthrough holeTO - 220 - 3  1 channel25 V enhancement  
R6015FNJTL


MOSFET Nch 600V 15A Power MOSFET
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ROHM 0
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AUD 3.2476
Multiples of: 1000

15 A600 V270 mOhmsN - Channel 3 V- 55 C+ 150 C255 WSmd/SmtTO - 263 - 3ReelSi1 Channel+/- 30 V42 nCEnhancement  
STB24NM60N


MOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh II
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STMicroelectronics 0
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AUD 3.2493
Multiples of: 1000

17 A600 V168 mOhmsn - channel 3 V  125 Wsmd/smtD2PAKReelsi1 channel30 V46 nC  mdmesh
SQM200N04-1M1L-GE3


MOSFET 40V 200A, 375W Automotive
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Vishay 0
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AUD 3.25
Multiples of: 1

200 A40 V1.1 mOhmsN - Channel20 V2.5 V  375 WSmd/SmtD2PAK - 7Reel   413 nC  Trenchfet
STH140N8F7-2


STMicroelectronics MOSFET N-chanl 80 V 33 mOhm typ 90 A Pwr MOSFET
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STMicroelectronics 0
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AUD 3.25
Multiples of: 1000

90 A80 V4 mOhmsn - channel 4.5 V- 55 C+ 175 C200 Wsmd/smtH2PAK - 2Reelsi1 channel+/- 20 V96 nCenhancement stripfet
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