MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFB4137PBF


International Rectifier MOSFET 300V, 40A, 69 mOhm 83 nC Qg, TO-220AB
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Infineon 44
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AUD 7.3936
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38 A300 V56 mOhmsN - Channel20 V5 V- 55 C+ 175 C341 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V125 nCEnhancement  
IRFS7534-7PPBF


N-Channel 60 V 240A (Tc) 290W (Tc) Surface Mount D2PAK (7-Lead)
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Infineon 0
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AUD 3.2323
Multiples of: 1

255 A60 V1.95 mOhmsN - Channel 3.7 V  290 WSmd/SmtD2PAK - 7TubeSi1 Channel 300 nC  Strongirfet
IRF3305PBF


Trans MOSFET N-CH 55V 140A 3-Pin(3+Tab) TO-220AB Tube
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Infineon 0
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AUD 3.2339
Multiples of: 50

140 A55 V8 mOhmsN - Channel  - 55 C+ 175 C330 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V100 nCEnhancement  
NCE01H21T


MOSFET N Trench 100V 210A (Tc) 4V @ 250uA 4 mΩ @ 40A,10V TO-247 (AC) RoHS
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NCE Power 0
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AUD 3.2344
Multiples of: 1

                   
SQM85N15-19_GE3


MOSFET 150V 85A 375W AEC-Q101 Qualified
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Vishay 0
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AUD 3.2356
Multiples of: 800

85 A150 V16 mOhmsN - Channel 2.5 V- 55 C+ 175 C375 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V120 nCEnhancementAec - Q101Trenchfet
STB17N80K5


MOSFET N-channel 800 V, 0.29 Ohm typ., 14 A MDmesh K5 Power MOSFET in a D2PAK package
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STMicroelectronics 0
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AUD 3.2371
Multiples of: 1000

         Smd/SmtTO - 263 - 3Cut TapeSi     Mdmesh
PHP110NQ06LT,127


Trans MOSFET N-CH 55V 75A 3-Pin(3+Tab) TO-220AB Rail
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NXP 0
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AUD 3.238
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NCE0275T


MOSFET N Trench 200V 75A (Tc) 4.5V @ 250uA 20 mΩ @ 40A,10V TO-247 RoHS
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NCE Power 0
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AUD 3.2383
Multiples of: 1

                   
SIHP22N60EF-GE3


MOSFET Nch 600V Vds 30V Vgs TO-220AB; w/diode
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Vishay 0
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AUD 3.2385
Multiples of: 1

19 A600 V182 mOhmsN - Channel 2 V- 55 C+ 150 C179 WThrough HoleTO - 220AB - 3TubeSi1 Channel30 V96 nCEnhancement  
IXTP230N04T4M


Discrete Semiconductor Modules Disc MSFT NChTrenchGate-Gen4 TO-220AB/FP
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IXYS 0
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AUD 3.2388
Multiples of: 1

230 A40 V2.9 mOhmsN - Channel 2 V- 55 C+ 175 C340 WThrough HoleTO - 220AB - 3Tube  10 V   Trencht4
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First...51965197519851995200...

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