MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ISG0613N04NM6HSCATMA1


MOSFETs N
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AUD 3.1114
Multiples of: 1

299 A40 V880 uOhmsN - Channel 2.8 V- 55 C+ 175 C167 WSMD/SMTTFN - 10Reel , Cut TapeSi2 Channel- 20 V , + 20 V69 nCEnhancement  
IPW65R110CFD


MOSFET N-Channel MOSFET 650V 110mOhm
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AUD 3.1116
Multiples of: 1

31.2 A650 V99 mOhmsN - Channel 3.5 V- 55 C+ 150 C277.8 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V118 nCEnhancement Coolmos
TK14A65W5,S5X


MOSFET MOSFET NCh trr100 nsn 0.25ohm DTMOS
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Toshiba 0
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AUD 3.1117
Multiples of: 50

13.7 A650 V250 mOhmsN - Channel 4.5 V- 55 C+ 150 C40 WThrough HoleTO - 220FP - 3 Si1 Channel30 V40 nCEnhancement Dtmosiv
PSMN0R7-25YLD


MOSFET, N-CH, 25V, 300A, SOT-1023-4
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Nexperia 0
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AUD 3.1122
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   N Channel               
VT6J1T2CR


ROHM Semiconductor MOSFET
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ROHM 0
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AUD 3.1124
Multiples of: 1

100 mA20 V40 Ohmsp - channel 1 V- 55 C+ 150 C150 mWsmd/smtVMT - 6Reelsi2 channel10 V enhancement  
IPI020N06NAKSA1


Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3
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Infineon 0
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AUD 3.1134
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            optimos      
IRF2903ZSPBF


International Rectifier MOSFET 30V 1 N-CH HEXFET 2.4mOhms 160nC
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AUD 3.1142
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260 A30 V2.4 mOhmsN - Channel20 V   290 WSmd/SmtD - PAK - 3TubeSi1 Channel20 V160 nC   
PHP20N06T,127


Trans MOSFET N-CH 55V 20.3A 3-Pin(3+Tab) TO-220AB Rail
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AUD 3.1142
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           Rail/Tube    enhancement  
NCEP02580F


TO-220F-3 MOSFETs ROHS
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NCE Power 0
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AUD 3.1146
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NTE2904


Transistor: N-MOSFET; 55V; 64A; TO220
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AUD 3.1154
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First...51815182518351845185...

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