MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NVMFWS003N10MCT1G


MOSFETs MOSFET - Power, Single, N-Channel 100 V, 3.1mohm, 169A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
6 to 16 Weeks Calender.png

AUD 2.6086
Multiples of: 1

169 A100 V3.1 mOhmsN - Channel 4 V- 55 C+ 175 C194 WSMD/SMTDFNW - 5Reel , Cut TapeSi1 Channel- 20 V , + 20 V62 nCEnhancement  
IXTA08N100P


MOSFET 0.8 Amps 1000V 20 Rds
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IXYS 0
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AUD 2.6086
Multiples of: 1

800 mA1 kV20 Ohmsn - channel  - 55 C+ 150 C42 Wsmd/smtTO - 263 - 3Tubesi1 channel20 V enhancement  
BSC040N10NS5SCATMA1


MOSFET TRENCH >=100V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 2.6086
Multiples of: 4000

136 A100 V4 mOhmsN - Channel 3.8 V- 55 C+ 150 C139 WSMD/SMTTDSON - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V72 nCEnhancement  
IRL620PBF


N-Channel 200 V 5.2A (Tc) 50W (Tc) Through Hole TO-220AB
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Vishay 0
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AUD 2.6095
Multiples of: 1

   N - Channel  - 55 C+ 150 C Through HoleTO - 220 - 3TubeSi      
IPP65R150CFD


Infineon Technologies MOSFET N-Ch 700V 22.4A TO220-3
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Infineon 0
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AUD 2.6104
Multiples of: 1

22.4 A650 V135 mOhmsN - Channel+/- 20 V4 V- 55 C+ 150 C195.3 WThrough HolePG - TO 220Tube-1 Channel20 V86 nCEnhancement Coolmos
IPA65R150CFD


Infineon Technologies MOSFET N-Ch 700V 22.4A TO220FP-3
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Infineon 0
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AUD 2.6104
Multiples of: 1

22.4 A650 V135 mOhmsn - channel 3.5 V- 55 C+ 150 C34.7 Wthrough holeTO - 220FP - 3Tubesi1 channel20 V86 nCenhancement coolmos
FQA70N15


Fairchild Semiconductor MOSFET 150V N-Channel QFET
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ON Semiconductor 0
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AUD 2.6117
Multiples of: 30

70 A150 V28 mOhmsn - channel25 V - 55 C+ 175 C330 Wthrough holeTO - 3P - 3Tubesi1 channel25 V enhancement qfet
SPA16N50C3XK


Trans MOSFET N-CH 560V 16A 3-Pin(3+Tab) TO-220FP
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Infineon 0
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AUD 2.6123
Multiples of: 500

                   
IRFBC30PBF


600V 3.6A 2.2@10V,2.2A 74W 4V@250uA 1PCSNChannel TO-220-3 MOSFETs ROHS
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Infineon 0
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AUD 2.6132
Multiples of: 1

                   
STB8N90K5


MOSFET PTD HIGH VOLTAGE
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STMicroelectronics 0
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AUD 2.6137
Multiples of: 1

8 A900 V600 mOhmsN - Channel 3 V- 55 C+ 150 C130 WSMD/SMTD2PAK - 3 (TO - 263 - 3)Reel , Cut TapeSi1 Channel- 30 V , 30 V11 nCEnhancement MDmesh
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