MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF6662TR1PBF


MOSFET MOSFT 100V 47A 22mOhm 22nC Qg
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AUD 2.6186
Multiples of: 1

8.3 A100 V17.5 mOhmsn - channel20 V4.9 V + 150 C89 Wsmd/smtDirectfet - 7Reel   22 nC   
SI7788DP-T1-GE3


N-Channel 30 V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8
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AUD 2.6192
Multiples of: 1

   n - channel  - 55 C+ 150 C smd/smtPOWERPAK SO - 8Reelsi     trenchfet
SISS52DN-T1-GE3


N-Channel 30V 47.1A (Ta), 162A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8SH
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AUD 2.6198
Multiples of: 1

          Powerpak® 1212 - 8SHCut Tape (Ct)Mosfet (Metal Oxide)      
STF16N50U


STMicroelectronics MOSFET N-ch 500V 0.47 Ohm 15A UltraFAST Mesh
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STMicroelectronics 0
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AUD 2.62
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15 A500 V470 mOhmsn - channel     through holeTO - 220 - 3Tubesi1 channel     
AOT11S65L


MOSFET N-CH 650V 11A TO220
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AUD 2.6209
Multiples of: 1000

           -       
SQJQ100E-T1_GE3


MOSFET 40V Vds 160A Id AEC-Q101 Qualified
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AUD 2.6215
Multiples of: 1

160 A40 V900 uOhmsN - Channel 1.5 V- 55 C+ 175 C136 WSMD/SMTPOWERPAK - 8X8 - 4Reel , Cut TapeSi1 Channel- 20 V , 20 V220 nCEnhancementAEC - Q101TrenchFET
SQJQ480E-T1_GE3


MOSFET N Ch 80Vds 20Vgs AEC-Q101 Qualified
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AUD 2.6215
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150 A80 V2.4 mOhmsN - Channel 2.5 V- 55 C+ 175 C136 WSmd/SmtPOWERPAK - 8X8L - 4Cut TapeSi1 Channel20 V144 nCEnhancementAec - Q101Trenchfet
IPP70N10SL16AKSA1


MOSFET MOSFET_(75V 120V(
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AUD 2.6223
Multiples of: 228

   n - channel       Tube 1 channel     
SPP11N65C3XKSA1


MOSFET N-Ch 650V 11A TO220-3
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AUD 2.6229
Multiples of: 1

11 A650 V380 mOhmsn - channel 3 V- 55 C+ 150 C125 Wthrough holeTO - 220 - 3Tubesi1 channel20 V45 nC  coolmos
IRF6643TR1PBF


Transistor: N-MOSFET; unipolar; 150V; 6.2A; 89W; DirectFET
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AUD 2.6233
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6.2 A150 V29 mOhmsN - Channel 4.9 V + 150 C89 WSmd/SmtDIRECT - FET MZReelSi1 Channel20 V39 nC   
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