MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PSMN015-100P,127


MOSFET RAIL PWR-MOS
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Nexperia 12
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AUD 4.0974
Multiples of: 1

75 A100 V15 mOhmsN - Channel20 V - 55 C+ 175 C300 WThrough HoleTO - 220 - 3Tube    Enhancement  
BSC010N04LST


MOSFET TRENCH <= 40V
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Infineon 11
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AUD 2.446
Multiples of: 1

                   
SQJA81EP-T1_GE3


MOSFET Automotive P-Channel 80 V D-S 175C MOSFET PowerPAK SO-8L 90M SG 17.3 mO @ 10V mO @ 7.5V 26.5 mO @ 4.5V
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Vishay 0
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AUD 2.4389
Multiples of: 1

           Cut Tape       
IRL1004STRRPBF


International Rectifier MOSFET 40V 1 N-CH HEXFET PWR MOSFET 6.5mOhms
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Infineon 0
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AUD 2.4395
Multiples of: 1

130 A40 V9 mOhmsN - Channel 1 V- 55 C+ 175 C3.8 WSmd/SmtD - PAK - 3ReelSi1 Channel16 V100 nCEnhancement  
IPL65R099C7AUMA1


Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4
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Infineon 0
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AUD 2.44
Multiples of: 3000

            Coolmos      
STB33N60DM2


MOSFET PTD HIGH VOLTAGE
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STMicroelectronics 0
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AUD 2.4409
Multiples of: 1000

24 A650 V130 mOhmsn - channel 3 V- 55 C+ 150 C190 Wsmd/smtD2PAK - 3Cut Tapesi1 channel+/- 25 V43 nCenhancement mdmesh
BSC026N08NS5ATMA1/BKN


Trans MOSFET N-CH 80V 100A 8-Pin SuperSO T/R
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Infineon 0
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AUD 2.4422
Multiples of: 5000

                   
NTD5C446NT4G


MOSFET T6 40V SL DPAK
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ON Semiconductor 0
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AUD 2.4423
Multiples of: 1

110 A40 V2.9 mOhmsN - Channel 2 V- 55 C+ 175 C66 WSmd/SmtDPAK - 3Cut TapeSi1 Channel20 V34.3 nCEnhancementAec - Q100 
IXTP160N04T2


MOSFET 160 Amps 40V
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IXYS 0
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AUD 2.4448
Multiples of: 1

160 A40 V5 mOhmsN - Channel     Through HoleTO - 220 - 3TubeSi     Hiperfet
STF40NF20-VB


200V 45A 1PCSNChannel TO-220F MOSFETs ROHS
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VBsemi Elec 0
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AUD 2.4459
Multiples of: 1

                   
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