MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIHP17N80AE-GE3


MOSFET 800V N-CHANNEL
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Vishay 0
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AUD 2.327
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15 A800 V250 mOhmsN - Channel 4 V- 55 C+ 155 C179 WThrough HoleTO - 220 - 3TubeSi1 Channel- 30 V , 30 V41 nCEnhancement  
SI4413ADY-T1-GE3


MOSFET 30V 15A 3.0W 7.5mohm @ 10V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
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AUD 2.328
Multiples of: 1

10.5 A- 30 V7.5 mOhmsP - Channel20 V - 55 C+ 150 C1.5 WSmd/SmtSOIC - 8 NarrowReel       
IRL7833STRLPBF


Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; D2PAK
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Infineon 0
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AUD 2.3293
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150 A30 V4.5 mOhmsN - Channel    140 WSmd/SmtD2PAKReelSi1 Channel20 V32 nC   
NDFP03N150CG


MOSFET N-CH Power MOSFET 1500V 2.5A
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ON Semiconductor 0
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AUD 2.3304
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2.5 A1.5 kV10.5 Ohmsn - channel   + 150 C2 Wthrough holeTO - 220FP - 3Tubesi1 channel10 V34 nCenhancement  
STI33N60M2


STMicroelectronics MOSFET
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STMicroelectronics 0
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AUD 2.3314
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26 A600 V125 mOhmsn - channel+/- 25 V3 V- 55 C+ 150 C190 Wthrough holeTO - 262 - 3Reelsi1 channel25 V45.5 nCenhancement mdmesh
SQD50P04-09L_GE3


P-Channel 40 V 50A (Tc) 136W (Tc) Surface Mount TO-252AA
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Vishay 0
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AUD 2.3321
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- 50 A- 40 V9.4 mOhmsP - Channel 2.5 V- 55 C+ 175 C136 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V103 nCEnhancementAec - Q101Trenchfet
IPW50R399CP


MOSFET COOL MOS PWR TRANS 560V 0.399 Ohms
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Infineon 0
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AUD 2.3339
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9 A500 V399 mOhmsn - channel  - 55 C+ 150 C83 Wthrough holeTO - 247Tubesi1 channel20 V enhancement coolmos
FHA24N50A


500V 24A 200mO@10V,12A 290W N Channel TO-3P MOSFETs ROHS
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FeiHong 0
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AUD 2.334
Multiples of: 1

                   
SQP120N06-06_GE3


MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified
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Vishay 0
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AUD 2.3354
Multiples of: 1

119 A60 V4.5 mOhmsN - Channel 2.5 V- 55 C+ 175 C175 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V145 nCEnhancementAec - Q101Trenchfet
TDM3430


MOSFET N Trench 40V 40A 2.5V @ 250uA 1.7 mΩ @ 25A,10V TO-263 RoHS
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AUD 2.3379
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