MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TPB65R120M


TO-263-2 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

UNIGROUP 1
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AUD 2.3544
Multiples of: 1

                   
SIR610DP-T1-RE3-VB


DFN-8(5x6) MOSFETs ROHS
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VBsemi Elec 0
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AUD 2.3522
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AOB286L


Transistor: N-MOSFET; unipolar; 80V; 55A; 83W; TO263
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Alpha & Omega 0
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AUD 2.3524
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PSMN0R9-25YLC


MOSFET, N CH, 25V, 100A, LFPAK
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Nexperia 0
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AUD 2.353
Multiples of: 1

   N Channel               
IPP100N04S2L-03


Infineon Technologies MOSFET N-Ch 40V 100A TO220-3 OptiMOS
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Infineon 0
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AUD 2.353
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100 A40 V3.3 mOhmsn - channel  - 55 C+ 175 C300 Wthrough holeTO - 220 - 3Tubesi1 channel20 V enhancement optimos
FDB9406L_F085


MOSFET N-Channel Power Trench MOSFET
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ON Semiconductor 0
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AUD 2.3531
Multiples of: 1

110 A40 V1.2 mOhmsN - Channel 1 V- 55 C+ 175 C176 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V170 nCEnhancement  
NCE65TF180T


650V 21A 160mO@10V,10.5A 188W N Channel TO-247 MOSFETs ROHS
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NCE Power 0
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AUD 2.3544
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IRL520


MOSFET RECOMMENDED ALT 844-IRL520LPBF
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Vishay 0
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AUD 2.3546
Multiples of: 1

9.2 A100 V270 mOhmsn - channel  - 55 C+ 175 C60 Wthrough holeTO - 220 - 3Tubesi1 channel10 V enhancement  
BFL4001-1E


ON Semiconductor MOSFET
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ON Semiconductor 0
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AUD 2.356
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6.5 A900 V2.7 Ohmsn - channel      TO - 220 - 3Tube       
TPH2R306NH,L1Q(M


Transistor: N-MOSFET; unipolar; 60V; 130A; 78W; SOP8A
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Toshiba 0
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AUD 2.3561
Multiples of: 1

                   
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