MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP3026SFDF-7


MOSFET MOSFET BVDSS: 25V-30V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 150
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AUD 2.2672
Multiples of: 1

8.6 A30 V15 mOhmsP - Channel 3 V- 55 C+ 150 C2 WSmd/SmtU - DFN2020 - 6Cut TapeSi1 Channel25 V19.6 nCEnhancement  
IRFB4110PBFXKMA1


MOSFETs TRENCH >=100V
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Infineon 0
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AUD 2.2493
Multiples of: 1

120 A100 V4.5 mOhmsN - Channel 4 V- 55 C+ 175 C370 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V150 nCEnhancement  
NCEP01T18T


100V 180A 3mO@10V,100A 300W N Channel TO-247 MOSFETs ROHS
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NCE Power 0
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AUD 2.2494
Multiples of: 1

                   
AUIRF6215S


MOSFET Automotive MOSFET 150V, 295mOhm, D2Pak
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Infineon 0
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AUD 2.25
Multiples of: 1

13 A150 V290 mOhmsP - Channel     Smd/SmtTO - 252 - 3TubeSi    Aec - Q101 
R6008ANX


Trans MOSFET N-CH 600V 8A 3-Pin(3+Tab) TO-220FM Bulk
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ROHM 0
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AUD 2.2501
Multiples of: 1

           Bulk    Enhancement  
IRFB9N65APBF-BE3


N-Channel 650V 8.5A (Tc) 167W (Tc) Through Hole TO-220AB
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Vishay 0
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AUD 2.2508
Multiples of: 1

8.5 A650 V930 mOhmsN - Channel 4 V- 55 C+ 150 C167 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 30 V , + 30 V48 nCEnhancement  
STB26N60M2


MOSFET N-Ch 600V 0.14 Ohm 20A M2 Power
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STMicroelectronics 0
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AUD 2.2508
Multiples of: 1

20 A600 V140 mOhmsN - Channel 2 V- 55 C+ 150 C169 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel25 V34 nCEnhancement  
IPI50R350CP


MOSFET COOL MOS PWR TRANS 550V 0.350 Ohms
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Infineon 0
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AUD 2.2513
Multiples of: 297

10 A500 V350 mOhmsn - channel  - 55 C+ 150 C89 Wthrough holeTO - 262Tubesi1 channel20 V enhancement coolmos
NVATS68301PZT4G


MOSFET Power MOSFET 75 ml -100V P-Chan
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ON Semiconductor 0
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AUD 2.2521
Multiples of: 1

           Cut Tape       
HAT2173H-EL-E


MOSFET MOSFET
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Renesas 0
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AUD 2.2521
Multiples of: 1

         smd/smtLFPAK - 5Cut Tapesi      
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