MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NVMFD5C674NLT1G


MOSFET T6 60V LL S08FL DS
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ON Semiconductor 98
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AUD 2.2474
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42 A60 V11.7 mOhmsN - Channel 1.2 V- 55 C+ 175 C37 WSmd/SmtDFN - 8Cut TapeSi2 Channel20 V10 nCEnhancementAec - Q101 
SPP07N60S5


MOSFET N-Ch 600V 7.3A TO220-3 CoolMOS S5
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Infineon 0
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AUD 2.2438
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7.3 A600 V600 mOhmsn - channel  - 55 C+ 150 C82 Wthrough holeTO - 220 - 3Tubesi1 channel20 V enhancement coolmos
IPB010N06N-VB


60V 200A 2m@10V 1PCSNChannel TO-263-7L MOSFETs ROHS
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VBsemi Elec 0
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AUD 2.2441
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TPCA8048-H


MOSFET, N CH, 60V, 35A, SOP8
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Toshiba 0
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AUD 2.2444
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   N Channel               
AOTF11S65L


N-Channel 650 V 11A (Tc) 31W (Tc) Through Hole TO-220F
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Alpha & Omega 0
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AUD 2.2455
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           -       
SIHP15N60E-BE3


MOSFET N-CHANNEL 600V
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Vishay 0
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AUD 2.2471
Multiples of: 1000

15 A600 V280 mOhmsN - Channel 4 V- 55 C+ 150 C180 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 30 V , + 30 V78 nCEnhancement  
SI4880DY-T1-E3


MOSFET 30V 13A 2.5W
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Vishay 0
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AUD 2.2472
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13 A30 V8.5 mOhmsn - channel25 V - 55 C+ 150 C2.5 Wsmd/smtSOIC - 8 NarrowReel   25 nCenhancement  
IRF6655TR1


MOSFET 100V 1 N-CH HEXFET DIRECTFET SH
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Infineon 0
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AUD 2.2472
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4.2 A100 V62 mOhmsn - channel20 V - 40 C+ 150 C2.2 Wsmd/smtDirectfet - 6Reel    enhancement  
FCPF600N65S3R0L-F154


MOSFET SUPERFET3 650V TO220F PKG
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ON Semiconductor 0
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AUD 2.2474
Multiples of: 1000

6 A650 V600 mOhmsN - Channel 4.5 V- 55 C+ 150 C24 WThrough Hole  Si1 Channel- 30 V , + 30 V11 nCEnhancement  
AOTF22N50-VB


500V 18A 210mΩ@10V 4.5V 1PCSNChannel TO-220F MOSFETs ROHS
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VBsemi Elec 0
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AUD 2.2483
Multiples of: 1

                   
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