MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF6643TRPBF


N-Channel 150 V 6.2A (Ta), 35A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 2.0391

Multiples of: 1

6.2 A150 V29 mOhmsN - Channel20 V4 V- 40 C+ 150 C89 WSmd/SmtDirectfet - 3 MZReelSi1 Channel20 V39 nCEnhancement Directfet
IRFS7537PBF


Transistor: N-MOSFET; unipolar; 60V; 173A; 230W; D2PAK
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AUD 2.04

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173 A60 V3.3 mOhmsN - Channel20 V3.7 V- 55 C+ 175 C230 WSmd/SmtD2PAK - 2TubeSi1 Channel20 V142 nC  Strongirfet
NTE2948


Transistor: N-MOSFET; 400V; 1A; TO251
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NTE 0
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AUD 2.04

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PSMN5R0-100ES


MOSFET, N CH, 100V, 120A, SOT226
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Nexperia 0
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AUD 2.0408

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   N Channel               
STP20NM65N


MOSFET N-Channel 650V Pwr Mosfet
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STMicroelectronics 0
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AUD 2.0412

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18 A650 V190 mOhmsn - channel25 V - 55 C+ 150 C160 Wthrough holeTO - 220 - 3Tube    enhancement  
TSM70N750CH C5G


Transistor: N-MOSFET; unipolar; 700V; 3.6A; 62.5W; IPAK
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Taiwan Semiconductor 0
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AUD 2.0418

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NE5500234-T1-AZ


CEL Silicon Medium Power LDMOSFET RoHS directive compliant
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AUD 2.0428

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           Tape       
BSC082N10LS G


MOSFET OptiMOS 2 PWR TRANST 100V 100A
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AUD 2.0429

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13.8 A100 V8.2 mOhmsN - Channel20 V - 55 C+ 150 C156 WSmd/SmtTDSON - 8ReelSi1 Channel20 V Enhancement Optimos
IPB200N15N3 G


MOSFET OptiMOS 3 PWR TRANS 150V 50A
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6 to 16 Weeks Calender.png

AUD 2.0429

Multiples of: 1

50 A150 V20 mOhmsN - Channel 4 V- 55 C+ 175 C150 WSmd/SmtTO - 263ReelSi1 Channel20 V31 nCEnhancement Optimos
IPB65R190CFD


Infineon Technologies MOSFET N-Ch 650V 17.5A D2PAK-2 CoolMOS CFD2
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6 to 16 Weeks Calender.png

AUD 2.0445

Multiples of: 1

17.5 A650 V190 mOhmsN - Channel30 V4 V- 55 C+ 150 C151 WSmd/SmtD2PAK - 2ReelSi1 Channel20 V68 nCEnhancement Coolmos
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