MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQ4532AEY-T1_GE3


MOSFET N Ch 30Vds 20Vgs AEC-Q101 Qualified
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 24
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AUD 2.0506
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7.3 A , 5.3 A30 V21 mOhms , 56 mOhmsN - Channel, P - Channel 1.5 v , 2.5 V- 55 C+ 175 C3.3 w , 3.3 WSmd/SmtSO - 8Cut TapeSi2 Channel20 V5.9 nC , 7.9 nCEnhancementAec - Q101Trenchfet
PTW50N20


MOSFET N Trench 200V 50A (Tc) 4V @ 250uA 50 mΩ @ 20A,10V TO-3P RoHS
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PIP 0
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AUD 2.0485
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IPB180N06S4H1ATMA1


Infineon Technologies MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS-T2
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Infineon 0
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AUD 2.0495
Multiples of: 1

180 A60 V1.3 mOhmsn - channel 2 V- 55 C+ 175 C250 Wsmd/smtTO - 263 - 7Reelsi1 channel20 V270 nCenhancement  
NCEP026N10


TO-220 MOSFETs ROHS
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NCE Power 0
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AUD 2.0503
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PHP3055E,127


Trans MOSFET N-CH 60V 10.3A 3-Pin(3+Tab) TO-220AB Rail
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NXP 0
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AUD 2.0505
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SQJQ906EL-T1_GE3


MOSFET 40V Vds 160A Id AEC-Q101 Qualified
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Vishay 0
6 to 16 Weeks Calender.png

AUD 2.0509
Multiples of: 1

160 A40 V3.6 mOhms , 3.6 mOhmsN - Channel 1.5 V- 55 C+ 175 C187 WSmd/SmtPOWERPAK - 8X8L - 4Cut TapeSi2 Channel20 V45 nC , 45 nCEnhancementAec - Q101Trenchfet
IPP80N04S2L-03


MOSFET OptiMOS PWR TRANST 40V 80A
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Infineon 0
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AUD 2.0514
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80 A40 V3.4 mOhmsn - channel  - 55 C+ 175 C300 Wthrough holeTO - 220 - 3Tubesi1 channel20 V enhancement  
2SJ599-AZ


Trans MOSFET P-CH 60V 20A 3-Pin(3+Tab) TO-251
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Renesas 0
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AUD 2.0517
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20 A  p    1 Wthrough hole      enhancement  
BUK752R3-40E


MOSFET, N-CH, 40V, 120A, TO220
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NXP 0
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AUD 2.052
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   n channel               
TK20J50D(F)


MOSFET PD=280W VDS=500V N-Silicon N CH MOS
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Toshiba 0
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AUD 2.0526
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