MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTD360N80S3Z


MOSFET MOSFET Power N-Channel SUPERFET III 800 V 13 A 360 mO DPAK
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 1716
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AUD 1.7997
Multiples of: 1

           Cut Tape       
IPB320N20N3G-VB


200V 48m@10V 3.3V 1PCSNChannel TO-263 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

VBsemi Elec 0
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AUD 1.7965
Multiples of: 1

                   
TSA20N50M


MOSFET N Trench 500V 20A (Tc) 4V @ 250uA 280 mΩ @ 10A,10V TO-3P RoHS
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Truesemi 0
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AUD 1.797
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TK5Q60W,S1VQ


Toshiba MOSFET DTMOSIV 600V 900mOhm 5.4A 60W 380pF10.5nC
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Toshiba 0
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AUD 1.7975
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5.4 A600 V770 mOhmsN - Channel 2.7 v to 3.7 V- 55 C+ 150 C60 WThrough HoleIPAK - 3ReelSi1 Channel30 V10.5 nC  Dtmosiv
IPB80N04S3-04


Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK
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Infineon 0
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AUD 1.798
Multiples of: 332

                enhancement  
SQM40N10-30_GE3


MOSFET 100V 40A 107W AEC-Q101 Qualified
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Vishay 0
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AUD 1.7981
Multiples of: 1

40 A100 V30 mOhmsN - Channel 2.5 V- 55 C+ 175 C107 WSmd/SmtTO - 252 - 3ReelSi1 Channel3.5 V41 nCEnhancementAec - Q101Trenchfet
IPI320N20N3GAKSA1


Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO262-3
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Infineon 0
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AUD 1.7981
Multiples of: 50

            Optimos 3      
FQPF8N80CYDTU


N-Channel 800 V 8A (Tc) 59W (Tc) Through Hole TO-220F-3 (Y-Forming)
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ON Semiconductor 0
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AUD 1.7992
Multiples of: 1

8 A800 V1.55 Ohmsn - channel  - 55 C+ 150 C59 Wthrough holeTO - 220 - 3Tubesi1 channel30 V enhancement  
NCEP028N85


TO-220 MOSFETs ROHS
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NCE Power 0
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AUD 1.7994
Multiples of: 1

                   
AUIRL7736M2TR


Transistor: N-MOSFET; unipolar; 40V; 112A; 63W; DirectFET
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Infineon 0
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AUD 1.7996
Multiples of: 1

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