MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TK60F10N1L,LXGQ


MOSFET PD=205W F=1MHZ AEC-Q101
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba 0
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AUD 1.7829

Multiples of: 1

60 A100 V6.11 mOhmsN - Channel 3.5 V- 55 C+ 175 C205 WSMD/SMTTO - 220SM - 3Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V60 nCEnhancementAEC - Q101 
XPW4R10ANB,L1XHQ


MOSFET POWER MOSFET TRANSISTOR DSOP Advance(WF)M PD=170W F=1MHZ
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Toshiba 0
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AUD 1.7829

Multiples of: 1

70 A100 V4.1 mOhmsN - Channel 3.5 V- 55 C+ 175 C170 WSMD/SMTDSOP - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V75 nCEnhancement  
IPD60R210CFD7ATMA1


MOSFET LOW POWER_NEW
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 1.7834

Multiples of: 2500

12 A600 V210 mOhmsN - Channel 3.5 V- 55 C+ 150 C64 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V23 nCEnhancement  
PSMN2R8-40BS,118


N-Channel 40 V 100A (Tc) 211W (Tc) Surface Mount D2PAK
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Nexperia 0
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AUD 1.7836

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100 A40 V2.9 mOhmsn - channel  - 55 C+ 175 C211 Wthrough holeD2PAKReelsi1 channel20 V    
SPA11N65C3XKSA1


MOSFET N Trench 650V 11A 3.9V @ 500uA 380 mΩ @ 7A,10V TO-220F (TO-220IS) RoHS
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AUD 1.7836

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   N Channel      TO - 220 - 3Tube       
SIHP15N60E-GE3


Vishay Semiconductors MOSFET 600V 280mOhm10V 15A N-Ch E-SRS
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AUD 1.784

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15 A600 V280 mOhmsN - Channel 4 V- 55 C+ 150 C180 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V39 nCEnhancement E Series
110N04UJ-VB


40V 280A 1mΩ@10V 1PCSNChannel TO-263 MOSFETs ROHS
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AUD 1.784

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IRLS3036-VB


60V 270A 1.6m@10V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 0
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AUD 1.784

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IRFB4710PBF-EL


Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-220AB
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AUD 1.7842

Multiples of: 1000

                   
IRFS7437-7PPBF


International Rectifier MOSFET 40V, 195A, 1.4 mOhm 150 nC Qg, D2-7pin
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AUD 1.7842

Multiples of: 1

295 A40 V1.4 mOhmsn - channel  - 55 C+ 175 C231 Wsmd/smtD2PAK - 7Tubesi1 channel 225 nC  strongirfet
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