MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC077N12NS3 G


MOSFET N-Ch 120V 98A TDSON-8 OptiMOS 3
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Infineon 669
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AUD 3.6184
Multiples of: 1

98 A120 V6.6 mOhmsN - Channel 2 V- 55 C+ 150 C139 WSmd/SmtTDSON - 8ReelSi1 Channel20 V88 nCEnhancement Optimos
IPA60R299CPXK


MOSFET N-Ch 600V 11A TO220FP-3 CoolMOS CP
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Infineon 0
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AUD 1.7757
Multiples of: 1

11 A600 V270 mOhmsN - Channel 2.5 V- 55 C+ 150 C33 WThrough HoleTO - 220FP - 3TubeSi1 Channel20 V29 nCEnhancement Coolmos
IPP65R225C7


MOSFET 650V CoolMOS C7 Power Trans; 225mOhm
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Infineon 0
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AUD 1.7757
Multiples of: 500

11 A650 V225 mOhmsn - channel20 V3 v to 4 V- 55 C+ 150 C63 Wsmd/smtTO - 220 - 3Tubesi1 channel20 V20 nCenhancement coolmos c7
IPW60R280P6FKSA1


MOSFET N-Ch 600V 13.8A TO247-3
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Infineon 0
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AUD 1.7757
Multiples of: 1

           Tube      coolmos
SIHP15N80AEF-GE3


MOSFETs N-CHANNEL 800V
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Vishay 0
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AUD 1.7757
Multiples of: 1000

           Reel , Cut TapeSi      
IQE065N10NM5ATMA1


MOSFET TRENCH >=100V
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Infineon 0
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AUD 1.7757
Multiples of: 1

85 A100 V6.5 mOhmsN - Channel 3.8 V- 55 C+ 175 C100 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V34 nCEnhancement  
SI7390DP-T1-E3


MOSFET 30V Vds 20V Vgs PowerPAK SO-8
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Vishay 0
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AUD 1.7765
Multiples of: 1

9 A30 V9.5 mOhmsn - channel20 V - 55 C+ 150 C1.8 Wsmd/smtSO - 8Reel    enhancement  
IRG7S313UTRLPBF


MOSFET 330V 40A D2PAK
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Infineon 0
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AUD 1.7766
Multiples of: 1

44 A330 V n - channel 4.7 V + 150 C78 Wsmd/smtD2PAKReelsi1 channel 33 nC   
TK12A50D(STA4,Q,M)


Toshiba MOSFET N-Ch MOS 12A 500V 45W 1350pF 0.52
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Toshiba 0
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AUD 1.7768
Multiples of: 50

12 A500 V520 mOhmsn - channel 2 V + 150 C45 Wthrough holeTO - 220 - 3Reelsi1 channel10 V25 nCenhancement dtmosiv
RJK0346DPA-01#J0B


MOSFET JET MOSFET, 30V, WPAK, Pb/Halogen Free
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Renesas 0
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AUD 1.7772
Multiples of: 2500

                   
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