MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF3707ZPBF


MOSFET MOSFT 30V 59A 9.5mOhm 9.7nC
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AUD 1.5693

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59 A30 V12.5 mOhmsn - channel20 V   57 Wthrough holeTO - 220 - 3Tube   9.7 nC   
IPA60R450E6XKSA1


Transistor: N-MOSFET; unipolar; 600V; 9.2A; 30W; TO220FP
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AUD 1.5696

Multiples of: 50

            coolmos e6      
MMF80R650PTH


Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-220F Tube
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AUD 1.5698

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8 A  n    32 Wthrough hole Rail/Tube    enhancement  
IRF3315SPBF


International Rectifier MOSFET 150V 1 N-CH HEXFET 82mOhms 63.3nC
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AUD 1.5706

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21 A150 V82 mOhmsn - channel20 V4 V- 55 C+ 175 C94 Wsmd/smtD - PAK - 3Tubesi1 channel20 V95 nC   
SQJ110EP-T1_GE3


MOSFETs Automotive N-Channel 100 V (D-S) 175C MOSFET, 6.3 mO 10V
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Vishay 0
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AUD 1.5711

Multiples of: 1

170 A100 V6.3 mOhmsN - Channel 2.7 V- 55 C+ 175 C500 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V75 nC   
NTD280N60S5Z-VB


600V 30A 240m@10V 4.5V 1 N-Channel TO-252 MOSFETs ROHS
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AUD 1.5714

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IPB057N15NM6ATMA1


MOSFETs OptiMOS 6 power MOSFET 150 V normal level in DPAK 3-pin package
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AUD 1.5714

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128 A150 V5.4 mOhmsN - Channel 4 V- 55 C+ 175 C211 WSMD/SMT Reel , Cut TapeSi1 Channel+ 20 V44 nCEnhancement OptiMOS
IPI50R299CP


MOSFET CoolMOS Power Transistor
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AUD 1.5715

Multiples of: 1

12 A500 V270 mOhmsn - channel 2.5 V- 55 C+ 150 C104 Wthrough holeTO - 262 - 3Tubesi1 channel20 V31 nCenhancement coolmos
FDB12N50F


650V 12A 800mO@10V,12A N Channel TO-263 MOSFETs ROHS
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AUD 1.5716

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HY4306B6


MOSFET N Trench 60V 290A (Tc) 4V @ 250uA 2.2 mΩ @ 140A,10V TO-263-6L RoHS
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AUD 1.5718

Multiples of: 1

                   
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