MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTMFS5C673NT1G


60V 50A 8.9mΩ@10V,7A 46W 4V@35uA N Channel DFN-5(5.9x4.9) MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 1.5764

Multiples of: 1

                   
SI7540DP-T1-GE3


MOSFET N/P-Ch MOSFET 12V 17/32mohomS@4.5V
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Vishay 0
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AUD 1.5765

Multiples of: 3000

11.8 A12 V14 mOhms , 26 mOhmsn - channel, p - channel  - 55 C+ 150 C3.5 Wsmd/smtSO - 8Reelsi2 channel8 V enhancement  
AON6290


N-Channel 100 V 28A (Ta), 85A (Tc) 7.3W (Ta), 208W (Tc) Surface Mount 8-DFN (5x6)
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Alpha & Omega 0
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AUD 1.5766

Multiples of: 1

85 A  N    208 WSurface Mount      Enhancement  
BSB013NE2LXI


MOSFET N-Ch 25V 163A CanPAK-3 MX OptiMOS
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Infineon 0
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AUD 1.5769

Multiples of: 1

163 A25 V1.3 mOhmsn - channel 2 V- 40 C+ 150 C57 Wsmd/smtWDSON - 2Reelsi1 channel20 V62 nCenhancement optimos
SUD40151EL-GE3


MOSFET 40V Vds 20V Vgs TO-252
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Vishay 0
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AUD 1.5769

Multiples of: 1

42 A40 V12 mOhmsP - Channel 1.5 V- 55 C+ 175 C50 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V74.3 nCEnhancement  
BSZ037N06LS5ATMA1


MOSFET 60V Mosfet 37mOhm PQFN 3x3
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Infineon 0
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AUD 1.5772

Multiples of: 1

40 A60 V3.7 mOhmsN - Channel 1.1 V- 55 C+ 150 C69 WSmd/SmtTSDSON - 8 FLCut TapeSi1 Channel20 V18 nCEnhancement  
TK8Q60W,S1VQ


Toshiba MOSFET DTMOSIV 600V 500mOhm 8A 80W 570pF 18.5nC
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Toshiba 0
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AUD 1.5773

Multiples of: 1

8 A600 V420 mOhmsN - Channel 2.7 v to 3.7 V- 55 C+ 150 C80 WThrough HoleIPAK - 3TubeSi1 Channel30 V18.5 nC  Dtmosiv
IRFD9120PbF


MOSFET P Trench 100V 1A 4V @ 250uA 600 mΩ @ 600mA,10V HEXDIP RoHS
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Infineon 0
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AUD 1.5776

Multiples of: 1

                   
AUIRFU8405


MOSFET Auto 40V N-Ch FET 1.65mOhm 100A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 1.5778

Multiples of: 1

100 A40 V1.98 mOhmsN - Channel20 V2.2 v to 3.9 V- 55 C+ 175 C163 WThrough HoleIPAK - 3TubeSi1 Channel20 V103 nCEnhancementAec - Q101Coolirfet
IRFZ34EPBF


MOSFET 60V 1 N-CH HEXFET 7mOhms 30nC
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 1.5786

Multiples of: 1

28 A60 V42 mOhmsn - channel20 V - 55 C+ 175 C68 Wthrough holeTO - 220 - 3Tube   20 nCenhancement  
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