MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
R6004JNJGTL


N-Channel 600 V 4A (Tc) 60W (Tc) Surface Mount LPTS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 0
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AUD 1.5196
Multiples of: 1000

4 A600 V1.43 OhmsN - Channel 5 V- 55 C+ 150 C60 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel30 V10.5 nCEnhancement Prestomos
BSC0910NDI


Infineon Technologies MOSFET
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Infineon 0
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AUD 1.5196
Multiples of: 5000

40 A25 V1.2 mOhms , 4.6 mOhmsN - Channel 1 V- 55 C+ 150 C2.5 WSmd/SmtPG - TISON - 8ReelSi2 Channel10 V5 nC , 23 nCEnhancement Optimos
IXTP02N50D


MOSFET 0.2 Amps 500V 30 Rds
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IXYS 0
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AUD 1.5196
Multiples of: 1

200 mA500 V30 Ohmsn - channel  - 55 C+ 150 C25 Wthrough holeTO - 220 - 3Tubesi1 channel20 V depletion  
HSP200N02


MOSFET N Channel 200V 70A 5V @ 250uA 33mΩ @ 60A,10V TO-220 RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HUASHUO 0
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AUD 1.5199
Multiples of: 1

                   
STP2NK100Z


MOSFET N-Channel 1000V Zener SuperMESH
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STMicroelectronics 0
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AUD 1.52
Multiples of: 50

2 A1 kV8.5 OhmsN - Channel  - 55 C+ 150 C70 WThrough HoleTO - 220TubeSi1 Channel30 V16 nCEnhancement Supermesh
STFI15N95K5


MOSFET POWER MOSFET
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STMicroelectronics 0
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AUD 1.52
Multiples of: 1

12 A950 V410 mOhmsn - channel 3 V- 55 C+ 150 C30 Wthrough holeTO - 281 - 3Tubesi1 channel30 V30 nCenhancement  
IPP075N15N3G


MOSFET N Channel 150V 100A(Tc) 4V @ 270uA 7.5mO @ 100A,10V TO-220-3 RoHS
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Infineon 0
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AUD 1.5201
Multiples of: 1

                   
IRLI520GPBF


MOSFET N-Chan 100V 7.2 Amp
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Vishay 0
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AUD 1.5202
Multiples of: 1

   N - Channel  - 55 C+ 175 C Through HoleTO - 220 - 3 FPTubeSi      
NVMD3P03R2G


MOSFET PFET SO8 30V 3A 85 MOHM
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ON Semiconductor 0
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AUD 1.5203
Multiples of: 439

3.05 A30 V85 mOhmsP - Channel     Smd/SmtSOIC - 8Cut TapeSi    Aec - Q101 
IRFZ44ZLPBF


N-Channel 55 V 51A (Tc) 80W (Tc) Through Hole TO-262
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Infineon 0
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AUD 1.5204
Multiples of: 1

51 A55 V13.9 mOhmsN - Channel    80 WThrough HoleTO - 262TubeSi1 Channel20 V29 nC   
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