MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PDP0980


MOSFET N Trench 100V 150A (Tc) 2.5V @ 250uA 4.2 mΩ @ 20A,10V TO-220 RoHS
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Potens 0
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AUD 1.5156
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PHB45NQ15T,118


N-Channel 150 V 45.1A (Tc) 230W (Tc) Surface Mount D2PAK
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Nexperia 0
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AUD 1.5162
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IPI530N15N3 G


Infineon Technologies MOSFET N-Ch 150V 21A I2PAK-3
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Infineon 0
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AUD 1.5162
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21 A150 V44 mOhmsn - channel 2 V- 55 C+ 175 C68 Wthrough holeTO - 262 - 3Tubesi1 channel20 V12 nCenhancement optimos
AON6156


Transistor: N-MOSFET; unipolar; 45V; 82A; 31W; DFN5x6
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Alpha & Omega 0
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AUD 1.5163
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ES6U41T2R


ROHM Semiconductor MOSFET
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ROHM 0
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AUD 1.5164
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1.5 A30 V170 mOhmsn - channel, sbd 500 mV- 55 C+ 150 C800 mWsmd/smtSOT - 563T - 6Reelsi1 channel12 V2.2 nCenhancement  
BUK9615-100A,118


MOSFET TAPE13 PWR-MOS
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Nexperia 0
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AUD 1.517
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75 A100 V14.4 mOhmsn - channel  - 55 C+ 175 C230 Wsmd/smtSOT - 404Reelsi1 channel10 V enhancement  
TPH2R408QM,L1Q


MOSFET Pb-F POWER MOSFET TRANSISTOR SOP8-ADV PD=210W F=1MHZ
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Toshiba 0
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AUD 1.5171
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120 A80 V2.43 mOhmsN - Channel 3.5 V + 175 C210 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , 20 V87 nCEnhancement  
TK380A65Y,S4X


MOSFET TO-220SIS PD=30W 1MHz PWR MOSFET TRNS
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Toshiba 0
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AUD 1.5171
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9.7 A650 V380 mOhmsN - Channel 4 V- 55 C+ 175 C30 WThrough HoleTO - 220SIS - 3TubeSi1 Channel30 V20 nCEnhancement Dtmosv
HYG020N06LS1P


60V 210A 2mΩ@10V,50A 230W 2.1V@250uA 37pF@25V N Channel 7236pF@25V 112nC@10V -55℃~+175℃@(Tj) TO-220FB-3L MOSFETs ROHS
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HuaYi 0
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AUD 1.5173
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IRFS23N15DTRLP


MOSFET MOSFT 150V 23A 90mOhm 37nC
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Infineon 0
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AUD 1.5174
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23 A150 V90 mOhmsn - channel 5.5 V- 55 C+ 175 C38 Wsmd/smtD2PAKReelsi1 channel30 V37 nCenhancement  
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